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PDF MW4IC2230MBR1 Data sheet ( Hoja de datos )
| Número de pieza | MW4IC2230MBR1 | |
| Descripción | RF LDMOS Wideband Integrated Power Amplifiers | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MW4IC2230/D
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230 wideband integrated circuit is designed for W - CDMA base
station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts)
LDMOS IC technology and integrates a multi - stage structure. Its wideband
On - Chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc @ 3.84 MHz Bandwidth
Driver Application
Typical Single - carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc @ 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• Also Available in Gull Wing for Surface Mount
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230MBR1
MW4IC2230GMBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GMBR1
VRD1
VRG1
VDS2
VDS1
RFin
VGS1
VGS2
VGS3
3 Stages IC
Quiescent Current
Temperature Compensation
Functional Block Diagram
VDS3/RFout
PIN CONNECTIONS
GND
VDS2
VRD1
VRG1
VDS1
RFin
VGS1
VGS2
VGS3
GND
1
2
3
4
5
6
7
8
9
10
11
16 GND
15
VDS3/
14 RFout
13
12 GND
(Top View)
NOTE: Exposed backside flag is source
terminal for transistors.
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1987.
REV 2
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MW4IC2230MBR1 MW4IC2230GMBR1
For More Information On This Product,
Go to: www.freescale.com
1
1 page  
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C2
VD2
VD1
C1
R1
VG1
R2
VG2
Freescale Semiconductor, Inc.
MW4IC2230
Rev 1
C5
C6
R3
VG3
C7
C9
C10 C11
C8
C3
VD3
C4
C12
GND
Figure 2. MW4IC2230MBR1(GMBR1) Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MW4IC2230MBR1 MW4IC2230GMBR1
For More Information On This Product,
Go to: www.freescale.com
5
5 Page 
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2X r1
aaa M C A B
PIN ONE
INDEX
6X
e1
4X
e2
e
D1
b2
aaa M C A
Freescale Semiconductor, Inc.
E1 B
A
4X b1
aaa M C A
2X
e3
b3
aaa M C A D M
10X b
aaa M C A
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ NOTE6
DATUM
PLANE
H
c1
tL
E
DETAIL Y
A A2
E2
YY
C
SEATING
PLANE
DETAIL Y
L1
GAGE
PLANE
A1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"
DO INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE .005 (0.13)
TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"
DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SINK.
CASE 1329A - 03
ISSUE B
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GMBR1
N
E2
VIEW Y - Y
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A .100 .104 2.54 2.64
A1 .001 .004 0.02 0.10
A2 .099 .110 2.51 2.79
D .928 .932 23.57 23.67
D1 .810 BSC
20.57 BSC
E .429 .437 10.90 11.10
E1 .353 .357 8.97 9.07
E2 .346 .350 8.79 8.89
L .018 .024 4.90 5.06
L1 .01 BSC
0.25 BSC
M .600 −−− 15.24 −−−
N .270 −−− 6.86 −−−
b .011 .017 0.28 0.43
b1 .037 .043 0.94 1.09
b2 .037 .043 0.94 1.09
b3 .225 .231 5.72 5.87
c1 .007 .011 .18 .28
e .054 BSC
1.37 BSC
e1 .040 BSC
1.02 BSC
e2 .224 BSC
5.69 BSC
e3 .150 BSC
3.81 BSC
r1 .063 .068
t 2° 8 °
1.6 1.73
2° 8°
aaa .004
.10
MOTOROLA RF DEVICE DATA
MW4IC2230MBR1 MW4IC2230GMBR1
For More Information On This Product,
Go to: www.freescale.com
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MW4IC2230MBR1.PDF ] | |
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