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PDF MT46H8M16LF Data sheet ( Hoja de datos )
| Número de pieza | MT46H8M16LF | |
| Descripción | Mobile Double Data Rate (DDR) SDRAM | |
| Fabricantes | Micron Technology | |
| Logotipo |  |
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Advance‡
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Mobile Double Data Rate (DDR) SDRAM
MT46H8M16LF – 2 Meg x 16 x 4 Banks
For a complete data sheet, please refer to www.micron.com/mobileds.
Features
• VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• Four internal banks for concurrent operation
• Data masks (DM) for masking write data–one mask
per byte
• Programmable burst lengths: 2, 4, or 8
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS compatible inputs
• On-chip temperature sensor to control refresh rate
• Partial array self refresh (PASR)
• Selectable output drive (DS)
• Clock stop capability
Options
• VDD/VDDQ
• 1.8V/1.8V
• Configuration
• 8 Meg x 16 (2 Meg x 16 x 4 banks)
• Plastic Package
• 60-Ball VFBGA (Lead-Free)
8mm x 10mm
• Timing – Cycle Time
• 7.5ns @ CL = 3
• 10ns @ CL = 3
• Operating Temperature Range
• Commercial (0° to +70°C)
• Industrial (-40°C to +85°C)
Marking
H
8M16
CF
-6
-10
None
IT
Figure 1: 60-Ball VFBGA Assignment
(Top View)
123456789
A
VSS DQ15 VSSQ
B
VDDQ DQ13 DQ14
C
VSSQ DQ11 DQ12
D
VDDQ DQ9 DQ10
E
VSSQ UDQS DQ8
F
VSS UDM NC
G
CKE CK CK#
H
A9 A11 A12/NC
J
A6 A7 A8
K
VSS A4 A5
VDDQ DQ0 VDD
DQ1 DQ2 VSSQ
DQ3 DQ4 VDDQ
DQ5 DQ6 VSSQ
DQ7 LDQS VDDQ
NC LDM VDD
WE# CAS# RAS#
CS# BA0 BA1
A10/AP A0
A1
A2 A3 VDD
Table 1: Configuration Addressing
Architecture
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
8 Meg x 16
2 Meg x 16 x 4
4K
4K (A0–A11)
4 (BA0, BA1)
1K (A0–A9)
Table 2: Key Timing Parameters
Speed
Grade
-75
-10
-75
-10
Clock Rate
CL = 3
133 MHz
104 MHz
-
CL = 2
-
-
83 MHz
67 MHz
Data-Out
Window
2ns
2.8ns
4ns
5ns
Access
Time
6.0s
7.0ns
6.5ns
7.0ns
DQS-DQ
Skew
+0.6ns
+0.7ns
+0.6ns
+0.7ns
PDF: 09005aef818ff781/Source: 09005aef818ff799
MT46H8M16.fm - Rev. A 03/05 EN
1 Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2005 Micron Technology, Inc. All rights reserved.
‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron
to meet Micron’s production data sheet specifications.
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