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PDF XN01212 Data sheet ( Hoja de datos )
| Número de pieza | XN01212 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Composite Transistors
XN01212 (XN1212)
Silicon NPN epitaxial planar type
For switching/digital circuits
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2212 (UN2212) × 2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
−55 to +150
Unit
V
V
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
345
21
0.30+–00..0150
10˚
Unit: mm
0.16+–00..0160
1: Collector (Tr1)
2: Collector (Tr2)
3: Base (Tr2)
EIAJ: SC-74A
4: Emitter
5: Base (Tr1)
Mini5-G1 Package
Marking Symbol: 9K
Internal Connection
34
5
Tr2 Tr1
■ Electrical Characteristics Ta = 25°C ± 3°C
21
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.2
Forward current transfer ratio
hFE Ratio *
hFE VCE = 10 V, IC = 5 mA
hFE(Small VCE = 10 V, IC = 5 mA
60
0.50 0.99
/Large)
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
Output voltage high-level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
Output voltage low-level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2
Input resistance
R1
−30% 22 +30%
Resistance ratio
R1 / R2
0.8 1.0 1.2
Transition frequency
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
150
V
V
µA
µA
mA
V
V
V
kΩ
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00018BED
1
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