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Número de pieza | IXFK26N90 | |
Descripción | (IXFx2xN90) HiPerFET Power MOSFETs | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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HiPerFETTM Power MOSFETs
Single MOSFET Die
IXFK/IXFX 26N90
IXFK/IXFX 25N90
V IR
DSS DSS
DS(on)
t
rr
900 V 26 A 0.30 W 250 ns
900 V 25 A 0.33 W 250 ns
Preliminary data sheet
Symbol
VDSS
V
DGR
VGS
V
GSM
I
D25
I
DM
IAR
EAR
EAS
dv/dt
PD
TJ
T
JM
Tstg
T
L
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
T
C
= 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
26N90
25N90
26N90
25N90
26N90
25N90
900 V
900 V
±20 V
±30 V
26 A
25
104 A
100
26 A
25
64 mJ
3J
5 V/ns
560 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.4/6 Nm/lb.in.
6g
10 g
Test Conditions
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
VDS = 0.8 •VDSS
V =0V
GS
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
900 V
3.0
TJ = 25°C
T
J
= 125°C
26N90
25N90
5.0
±200
100
2
0.3
0.33
V
nA
mA
mA
W
W
PLUS 247TM (IXFX)
G
D
S
TO-264 AA (IXFK)
(TAB)
G
D
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
Advantages
• PLUS 247TMpackage for clip or spring
mounting
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98553D (9/99)
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PDF Descargar | [ Datasheet IXFK26N90.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXFK26N90 | (IXFx2xN90) HiPerFET Power MOSFETs | IXYS Corporation |
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