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PDF STB200NF03 Data sheet ( Hoja de datos )
| Número de pieza | STB200NF03 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP200NF03
STB200NF03 STB200NF03-1
N-CHANNEL 30V - 0.0032 Ω - 120A D²PAK/I²PAK/TO-220
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
VDSS
RDS(on)
ID
STB200NF03/-1
STP200NF03
30 V
30 V
<0.0036 Ω 120 A(**)
<0.0036 Ω 120 A(**)
s TYPICAL RDS(on) = 0.0032Ω
s STANDARD THRESHOLD DRIVE
s 100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
3
1
D²PAK
TO-263
123
I²PAK
TO-262
3
2
1
TO-220
APPLICATIONS
INTERNAL SCHEMATIC DIAGRAM
s HIGH CURRENT, HIGH SWITCHING SPEED
s DC-DC & DC-AC CONVERTERS www.DataSheet4U.com
s SOLENOID AND RELAY DRIVERS
Ordering Information
SALES TYPE
STB200NF03T4
STP200NF03
STB200NF03-1
MARKING
B200NF03
P200NF03
B200NF03
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
ID(**)
ID
IDM(•)
Ptot
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
October 2002
PACKAGE
D2PAK
TO-220
I2PAK
PACKAGING
TAPE & REEL
TUBE
TUBE
Value
30
30
± 20
120
120
480
300
2.0
1.5
1.45
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
-55 to 175
°C
(1) ISD ≤120A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 25 V
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Normalized Gate Threshold Voltage vs Temperature
STB200NF03/-1 STP200NF03
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
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.Power Derating vs Tc
.Max Id Current vs Tc.
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DIM.
A
A1
B
B2
C
C2
D
e
E
L
L1
L2
STB200NF03/-1 STP200NF03
TO-262 (I2PAK) MECHANICAL DATA
MIN.
4.4
2.49
0.7
1.14
0.45
1.23
8.95
2.4
10
13.1
3.48
1.27
mm
TYP.
MAX.
MIN.
4.6 0.173
2.69 0.098
0.93 0.027
1.7 0.044
0.6 0.017
1.36 0.048
9.35 0.352
2.7 0.094
10.4 0.393
13.6 0.515
3.78 0.137
1.4 0.050
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inch
TYP.
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
L1
L2 D
L
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P011P5/E
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11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STB200NF03.PDF ] | |
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