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PDF K3236 Data sheet ( Hoja de datos )
| Número de pieza | K3236 | |
| Descripción | MOSFET ( Transistor ) - 2SK3236 | |
| Fabricantes | TOSHIBA | |
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2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3236
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
Unit: mm
· 4 V gate drive
· Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 42 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 60 V)
· Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS 60 V
VDGR 60 V
VGSS ±20 V
ID
35
A
IDP 105
PD 30 W
EAS DataShe6e8t4U.com mJ
IAR 35 A
EAR
3.0 mJ
Tch 150 °C
Tstg
-55~150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
4.16
62.5
°C/W
°C/W
Note 1: Please use devises on condition that the channel temperature is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C, L = 40 mH, RG = 25 W, IAR = 35 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution
DataShee
DataSheet4U.com
1 2002-08-12
1 page  
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2SK3236
rth - tw
10
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
10 m
Single pulse
100 m
PDM
t
T
Duty = t/T
Rth (ch-c) = 4.16°C/W
1m
10 m
100 m
1
10
Pulse width tw (S)
et4U.com
Safe operating area
1000
EAS – Tch
80
ID max (pulse) *
100
ID max
(continuous)
10
60
100 ms * DataSheet4U.co4m0
1 ms *
20
DC operation
Tc = 25°C
1
0.1
0.1
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
VDSS max
1 10
Drain-source voltage VDS (V)
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
0V
Test circuit
RG = 25 W
VDD = 50 V, L = 40 mH
BVDSS
IAR
VDD
VDS
Wave form
ΕAS
=
1
2
×L
×I2
×
ççèæ
BVDSS
BVDSS - VDD
÷÷øö
DataShee
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5 2002-08-12
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3236.PDF ] | |
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