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PDF NIS5101 Data sheet ( Hoja de datos )
| Número de pieza | NIS5101 | |
| Descripción | SMART HotPlug IC/Inrush Limiter/Circuit Breaker | |
| Fabricantes | ON Semiconductor | |
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NIS5101
SMART HotPlugt IC/Inrush
Limiter/Circuit Breaker
The SMART HotPlug Integrated Circuit combines the control
function and power FET into a single IC that saves design time and
reduces the number of components required for a complete hot swap
application. It is designed to allow safe insertion and removal of
electronic equipment to −48 V backplanes. This chip features
simplicity of use combined with an integrated solution.
The SMART HotPlug includes user selectable undervoltage and
overvoltage lockout levels. It also has adjustable current limiting that
can be reduced from the maximum level with a single resistor.
Operation at the maximum current level requires no extra external
components. An internal temperature shutdown circuit greatly
increases the reliability of this device.
Features
• Integrated Power Device
• 100 V Operation
• Thermal Limit Protection
• Adjustable Current Limit
• No External Current Shunt Required
• Undervoltage and Overvoltage Lockouts
• 6.5 A Continuous Operation
• UIS Rated
Typical Applications
• VoIP (Voice over Internet Protocol) Servers
• −48 V Telecom Systems
• +24 V Wireless Base Station Power
• Central Office Switching
• Electronic Circuit Breaker
7
Input +
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MARKING
DIAGRAM
8 S−PAK
NIS5101EX
1
EX SUFFIX
AYWW
CASE 553AA
7
X = 1 for Thermal Latch or
2 for Thermal Auto−retry
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping†
NIS5101E1T1
S−PAK
Latch Off
2000 Units/Reel
NIS5101E2T1
S−PAK 2000 Units/Reel
Auto−Retry
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DataShee
Voltage
Regulator
6
UVLO/
ENABLE
Undervoltage
Lockout
5
OVLO
Overvoltage
Shutdown
Thermal
Shutdown
Current
Limit
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Figure 1. Block Diagram
© Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 15
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4, 8
Drain
3
Current
Limit
Input −
1, 2
1
Publication Order Number:
NIS5101/D
1 page  
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NIS5101
TYPICAL APPLICATION CIRCUIT & OPERATION WAVEFORMS
(TA = 25°C unless otherwise noted)
++
RUVLO
Input +
ROVLO
UVLO
NIS5101
Drain
OVLO/EN
Current
Limit
Input −
+ DC−DC
Converter
Rlimit
Figure 8. Typical Application
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Load Capacitor
470 mF
Bounce
Bus Voltage
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Load
Voltage
Load
Current
1 A/div
GND
−48 V
Figure 9. Turn On Waveforms for 470 mF Load Capacitor
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NIS5101
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An overload condition is one in which the FET is fully it is important to know is that the current sense reference
enhanced and operating at it’s minimum RDSon. A short
circuit condition occurs when either the load has shorted or
voltage of the device is 50 mV. Knowing this information,
it is possible to use Figure 2 on the datasheet for the current
upon turn on, as the load capacitor to the hot swap device limit to calculate the ratio for any condition.
initially looks like a short circuit.
For ”normal” operating condition, the overload curve
A single resistor will determine both the short circuit and
overload current. For example, a 110 W resistor would
would apply. If a 100 W for the ILimit resistor is used, the
sense current would be 50 mV/ 100 W at the current limit
result in a 1 A current limit when charging the capacitance level, which results in 500 mA. The drain current is 2.7 A
at turn on, but once the FET is fully enhanced, it would under this condition, so the ratio is 5400:1.
allow the load to operate at a current up to 2.5 A. Once the
Same analysis can be made for “short circuit” conditions,
2.5 A limit is reached, any further reduction in load the only difference is that the short circuit curve of
impedance will result in a short circuit condition and the Figure 2 is used to do the ratio calculations instead.
current will be reduced to 1 amp.
There is a 5 W resistor in series with the sense cells. This
As with all SMART HotPlug devices, the current limit has a tolerance of about 10% and should be taken into
will never shut down the limiter. Only the thermal limit will account when making the above calculations.
stop the flow of current to the load. Once the current is
Turn−onSurge: During the turn−on event, there is a large
stopped due to the thermal limit, it will remain off until amount of energy dissipated due to the linear operation of
input power is recycled for the latching version, or it will the power device. The energy rating is the amount of energy
continuously retry to start again if it is the auto−retry that the device can absorb before the thermal limit circuit
version.
will shut the unit down. This is very important specially for
The ILimit graph shown in Figure 2 was generated from
the data of the ILimit characterization, the formulas for each
of the curves and temperatures are shown below:
the latch off device as it determines the maximum load
capacitance that the device can charge before the thermal
limit shuts the device down. The calculation of this is not
RILimit (W) = (56.55 / y)1.20; for TJ = 25C
RILimit (W) = (52.91 / y)1.22; for TJ = 120°C
RILimit (W) = (44.80 / y)1.33; for TJ = −40°C
very simple as it depends on several factors such as the
input voltage (Vin), load capacitance (CL), current limit
settings (ILimit) and device’s thermal transient response.
Figure 20 shows the device’s thermal transient response for
where “y” is the desired ILimit value.
minimum pad.
Main/Mirror MOSFET Current Ratio. The ratioDvaatraieSsheet4U.com
with current and sense resistance. The key parameter that
DataShee
100
10
1
0.1
0.01
0.00001
0.0001
0.001
0.01 0.1
TIME (seconds)
1
Figure 20. Thermal Transient Response
10
100 1000
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| PDF Descargar | [ Datasheet NIS5101.PDF ] | |
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