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Número de pieza | 2SJ246 | |
Descripción | SILICON P-CHANNEL MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
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2SJ246 L , 2SJ246 S
SILICON P-CHANNEL MOS FET
Application
High speed power switching
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4V gate drive device can be driven from
5V source.
• Suitable for Switching regulator, DC – DC
converter
DPAK–1
4
12 3
1
2, 4
3
4
123
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
DSaytmaSbohleet4U.com Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS –30 V
———————————————————————————————————————————
Gate to source voltage
VGSS ±20 V
———————————————————————————————————————————
Drain current
ID –7 A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
–28
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
–7 A
———————————————————————————————————————————
Channel dissipation
Pch**
20
W
———————————————————————————————————————————
Channel temperature
Tch 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
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2SJ246 L , 2SJ246 S
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Body to Drain Diode Reverse
Recovery Time
200
100
50
20
di/dt = 50 A/µs, Ta = 25°C
VGS = 0, Pulse test
10
–0.1 –0.2 –0.5 –1 –2
–5 –10
Reverse Drain Current I DR (A)
10000
5000
Typical Capacitance vs. Drain to
Source Voltage
VGS = 0
f = 1 MHz
2000
1000
500
Ciss
Coss
200
100
0
Crss
–10 –20 –30
Drain to Source Voltage
–40 –50
V DS (V)
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Dynamic Input Characteristics
0
VDD = –10 V
–25 V
–20
VDS
–40
VDD = –25 V
–10 V
0
–4
–8
–60
VGS
–12
–80
–100
0
I D= –7 A
–8 –16 –24 –32
Gate Charge Qg (nc)
–16
–20
–40
Switching Characteristics
500
VGS = –10 V, PW = 2 µs,
VDD =: –30 V, duty <=1 %
200 td(off)
100 tf
50
tr
20
td(on)
10
5
–0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
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5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet 2SJ246.PDF ] |
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