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PDF STW50N10 Data sheet ( Hoja de datos )
| Número de pieza | STW50N10 | |
| Descripción | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
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STW50N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
ST W50N10
V DSS
100 V
RDS(on)
< 0.035 Ω
ID
50 A
s TYPICAL RDS(on) = 0.027 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
1
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s POWER MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCRONOUS RECTIFICATION
TO-247
INTERNAL SCHEMATIC DIAGRAM
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ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VD GR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
January 1998
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Value
Uni t
100 V
100 V
± 20
V
50 A
35 A
200 A
180 W
1.2 W/oC
-65 to 175
oC
175 oC
ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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Normalized Gate Threshold Voltage vs
Temperature
STW50N10
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STW50N10.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STW50N10 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | ST Microelectronics |
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