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DIM100WHS17-E000 Schematic ( PDF Datasheet ) - Dynex Semiconductor

Teilenummer DIM100WHS17-E000
Beschreibung IGBT Power Module
Hersteller Dynex Semiconductor
Logo Dynex Semiconductor Logo 




Gesamt 8 Seiten
DIM100WHS17-E000 Datasheet, Funktion
www.DataSheet4U.com
DIM100WHS17-E000
DIM100WHS17-E000
Half Bridge IGBT Module
FEATURES
I Trench Gate Field Stop Technology
I Low Conduction Losses
I Low Switching Losses
I 10µs Short Circuit Withstand
PDS5719-1.2 February 2004
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1700V
2.0V
100A
200A
APPLICATIONS
I Motor Drives
I Wind Turbines
I UPS Systems
7(E2)
6(G2)
1(E1C2)
2(E2)
3(C1)
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100WHS17-E000 is a half bridge 1700V, DnacthaaSnhnelet4U.com
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
4(G1)
5(E1)
Fig. 1 Half bridge circuit diagram
DataShee
ORDERING INFORMATION
Order As:
DIM100WHS17-E000
Note: When ordering, please use the complete part number.
Outline type code: W
(See package details for further information)
Fig. 2 Module Outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
DataSheewt4wU.wco.mdynexsemi.com
1/8
DataSheet4 U .com






DIM100WHS17-E000 Datasheet, Funktion
www.DataSheet4U.com
DIM100WHS17-E000
200
Tj = 25˚C
Tj = 125˚C
175
150
500
Tcase = 125˚C
Vge = 15V
Rg(min) = 15 Ohms
400 Chip
Module
125
300
100
200
75
50
100
25
0
0 1.0 2.0
Forward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
3.0
0
0 200 400 600 800 1000 1200 1400 1600 1800
Collector-emitter voltage, Vce - (V)
Fig. 8 IGBT reverse bias safe operating area
et4U.com 175
150
125
100
DataSheet41U.0.c00om
Tj = 125˚C
0.100
Diode
Transistor
DataShee
75
50
25
0
0 200 400 600 800 1000 1200 1400 1600 1800
Reverse voltage, Vr - (V)
Fig. 9 Diode reverse bias safe operating area
0.010
0.001
0.001
IGBT
Diode
Ri (˚C/KW)
τi (ms)
Ri (˚C/KW)
τi (ms)
1
3.351
0.0494
11.638
0.13
23
27.502 28.592
2.105 31.712
62.808 138.478
2.943 56.587
0.01 0.1
1.0
Pulse width, tp - (s)
Fig. 10 Transient thermal impedance
4
112.02
95.39
8.64
304.19
10
6/8
DataSheet4U.com
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DataSheet4 U .com

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