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PDF DIM100PHM33-A000 Data sheet ( Hoja de datos )
| Número de pieza | DIM100PHM33-A000 | |
| Descripción | IGBT Power Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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DIM100PHM33-A000
FEATURES
I 10µs Short Circuit Withstand
I High Thermal Cycling Capability
I Non Punch Through Silicon
I Isolated MMC Base with AlN Substrates
DIM100PHM33-A000
Half Bridge IGBT Module
PDS5708-1.3 January 2004
KEY PARAMETERS
VCES
3300V
VCE(sat) *
(typ)
3.4V
IC
(max)
100A
IC(PK)
(max)
200A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I High Reliability Inverters
I Motor Controllers
1(E1/C2)
2(C1)
3(E2)
I Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100PHM33-A000 is a half bridge 3300V, DnacthaaSnhneelet4U.com
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This device is
optimised for applications requiring high thermal cycling
capability.
5(E1)
4(G1)
8(C1)
7(E2)
6(G2)
Fig. 1 Half bridge circuit diagram
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
DataShee
ORDERING INFORMATION
Order As:
DIM100PHM33-A000
Note: When ordering, please use the whole part number.
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM100PHM33-A000
TYPICAL CHARACTERISTICS
200
Common emitter
Tcase = 25˚C
175
Vce is measured at power busbars
and not the auxiliary terminals
150
200 Common emitter
Tcase = 125˚C
175
Vce is measured at power busbars
and not the auxiliary terminals
150
125 125
100 100
75 75
et4U.com
50 50
Vge = 10V
25
Vge = 12V
25
Vge = 15V
Vge = 20V
00
0123 45 6
0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics DataSheet4U.com
Vge = 10V
Vge = 12V
Vge = 15V
Vge = 20V
1 23 45 67
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
8
DataShee
250
Conditions:
Tc = 125°C,
225 Rg = 20 Ohms,
Vcc = 1800V,
200 Cge = 66nF
175
350
Conditions:
Tc = 125°C
IC = 100A
300 Vcc = 1800V
Cge = 66nF
250
150 200
125
150
100
75 100
50
25
Eon (mJ)
Eoff (mJ)
Erec (mJ)
0
0 25 50 75 100
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
50 Eon (mJ)
Eoff (mJ)
Erec (mJ)
0
10 20 30 40 50 60
Gate resistance, Rg - (ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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| PDF Descargar | [ Datasheet DIM100PHM33-A000.PDF ] | |
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