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PDF PN166 Data sheet ( Hoja de datos )
| Número de pieza | PN166 | |
| Descripción | Silicon PNP Phototransistor | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Phototransistors
PNA1601M (PN166)
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting various kinds of LEDs
Ultraminiature, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
IC
PC
Topr
Tstg
Ratings Unit
20 V
20 mA
50 mW
–25 to +65 ˚C
–30 to +85 ˚C
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2.6±0.2
C0.5 0.8
R0.55
Unit : mm
1.4±0.2
1.2±0.2
(0.4)
2-0.7
2-0.45
0.15
21
2.0
1: Collector
2: Emitter
DataShee
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
ICEO VCE = 10V
0.2 µA
Sensitivity to infrared emitters SIR*1 VCE = 10V, H = 15µW/cm2
3
µA
Peak sensitivity wavelength λP VCE = 10V
850 nm
Acceptance half angle
θ Measured from the optical axis to the half power point
35
deg.
Rise time
Fall time
Collector saturation voltage
tr*2
tf*2
VCE(sat)
VCC = 10V, ICE(L) = 5mA
RL = 100Ω
ICE(L) = 10µA, H = 15µW/cm2
4 µs
4 µs
0.5 V
*1 Measurements were made using infrared light (λ = 940 nm) as a light source.
*2 Switching time measuring circuit
Sig.IN
50Ω
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
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Note) The part number in the parenthesis shows conventional part number.
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PN166.PDF ] | |
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