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79C0832 Schematic ( PDF Datasheet ) - Maxwell Technologies

Teilenummer 79C0832
Beschreibung 8 Megabit (256K x 32-Bit) EEPROM MCM
Hersteller Maxwell Technologies
Logo Maxwell Technologies Logo 




Gesamt 19 Seiten
79C0832 Datasheet, Funktion
www.DataSheet4U.com
79C0832
8 Megabit (256K x 32-Bit)
EEPROM MCM
FEATURES:
DESCRIPTION:
• 256k x 32-bit EEPROM MCM
Maxwell Technologies’ 79C0832 multi-chip module (MCM)
• RAD-PAK® radiation-hardened against natural
memory features a greater than 100 krad (Si) total dose toler-
• space radiation
ance, dependent upon orbit. Using Maxwell Technologies’ pat-
• Total dose hardness:
DataSheet4eUnt.ecdomradiation-hardened RAD-PAK® MCM packaging
- >100 krad (Si)
technology, the 79C0832 is the first radiation-hardened 8
- Dependent upon orbit
megabit MCM EEPROM for space application. The 79C0832
• Excellent Single event effects
uses eight 1 Megabit high speed CMOS die to yield an 8
- SELTH > 120 MeV/mg/cm2
- SEU > 90 MeV/mg/cm2 read mode
megabit product. The 79C0832 is capable of in-system electri-
cal byte and page programmability. It has a 128 x 8 byte page
- SEU = 18 MeV/mg/cm2 write mode
programming function to make its erase and write operations
• High endurance
faster. It also features Data Polling and a Ready/Busy signal to
- 10,000 cycles/byte (Page Programming Mode)
indicate the completion of erase and programming operations.
- 10 year data retention
In the 79C0832, hardware data protection is provided with the
• Page Write Mode: 1 to 8 X 128 byte page
RES pin, in addition to noise protection on the WE signal and
• High Speed:
write inhibit on power on and off. Software data protection is
- 150 and 200 ns maximum access times
implemented using the JEDEC optional standard algorithm.
• Automatic programming
- 10 ms automatic Page/Byte write
Maxwell Technologies' patented RAD-PAK® packaging technol-
• Low power dissipation
ogy incorporates radiation shielding in the microcircuit pack-
- 160 mW/MHz active current
age. It eliminates the need for box shielding while providing
- 880 µ W standby current
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies self-defined Class
K.
DataShee
DataSheet4U.com
01.10.05 Rev 14
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com
All data sheets are subject to change without notice 1
©2005 Maxwell Technologies
All rights reserved.
DataSheet4 U .com






79C0832 Datasheet, Funktion
www.DataSheet4U.com
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
et4U.com
PARAMETER
TABLE 8. 79C0832 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATION
(V
CC
=
5V
±
10%,
TA
=
-55
TO
+125°
C)
SYMBOL
SUBGROUPS
MIN 1
MAX
Address Setup Time
-150
-200
tAS 9, 10, 11
0
0
--
--
Chip Enable to Write Setup Time (WE controlled)
-150
-200
tCS 9, 10, 11
0
0
--
--
Write Pulse Width
CE controlled
-150
-200
WE controlled
-150
-200
9, 10, 11
tCW
250
350
tWP
250
350
--
--
--
--
Address Hold Time
-150
-200
tAH 9, 10, 11
150
200
--
--
Data Setup Time
-150
-200
Data Hold Time
-150
-200
tDS 9, 10, 11
DataSheettD4HU.com 9, 10, 11
100
150
10
10
--
--
--
--
Chip Enable Hold Time (WE controlled)
-150
-200
tCH 9, 10, 11
0
0
--
--
Write Enable to Write Setup Time (CE controlled)
-150
-200
tWS 9, 10, 11
0
0
--
--
Write Enable Hold Time (CE controlled)
-150
-200
tWH 9, 10, 11
0
0
--
--
Output Enable to Write Setup Time
-150
-200
tOES 9, 10, 11
0
0
--
--
Output Enable Hold Time
-150
-200
tOEH 9, 10, 11
0
0
--
--
Write Cycle Time 2
-150
-200
tWC 9, 10, 11
--
--
10
10
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
DataShee
DataSheet4U.com
DataSheet4 U .com
01.10.05 Rev 14
All data sheets are subject to change without notice 6
©2005 Maxwell Technologies
All rights reserved

6 Page









79C0832 pdf, datenblatt
www.DataSheet4U.com
8 Megabit (256K x 32-Bit) EEPROM MCM
79C0832
Data Polling
Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per-
forming a write operation.
RDY/Busy Signal
RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal
goes low (VOL) after the first write signal. At the end of the write cycle, the RDY/Busy returns to a high state ( VOH).
RES Signal
When RES is LOW (VL), the EEPROM cannot be read or programmed. The EEPROM data must be protected by
keeping RES low when VCC is power on and off. RES should be high (VH) during read and programming operations.
et4U.com
Data Protection
DataSheet4U.com
To protect the data during operation and power on/off, the EEPROM has the internal functions described below.
1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming
mode by mistake. To prevent this phenomenon, the EEPROM has a noise cancellation function that cuts noise if its
width is 20ns or less in programming mode. Be careful not to allow noise of a width more than 20ns on the control
pins.
DataShee
DataSheet4U.com
DataSheet4 U .com
01.10.05 Rev 14
All data sheets are subject to change without notice 12
©2005 Maxwell Technologies
All rights reserved

12 Page





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