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79C0408 Schematic ( PDF Datasheet ) - Maxwell Technologies

Teilenummer 79C0408
Beschreibung 4 Megabit (512k x 8-bit) EEPROM MCM
Hersteller Maxwell Technologies
Logo Maxwell Technologies Logo 




Gesamt 20 Seiten
79C0408 Datasheet, Funktion
www.DataSheet4U.com
79C0408
4 Megabit (512k x 8-bit)
EEPROM MCM
RES
R/B
WE
OE
A0-16
CE1
128Kx 8
CE2
128Kx 8
CE3
128Kx 8
CE4
128Kx 8
I/ O0-7
Logic Diagram
FEATURES:
DESCRIPTION:
• Four 128k x 8-bit EEPROMs MCM
Maxwell Technologies’ 79C0408 multi-chip module (MCM)
• RAD-PAK® radiation-hardened against natural DataSheet4mUe.mcoormy features a greater than 100 krad (Si) total dose toler-
space radiation
ance, depending upon space mission. Using Maxwell Technol-
• Total dose hardness:
ogies’ patented radiation-hardened RAD-PAK® MCM
- > 100 krad (Si), depending upon space mission
packaging technology, the 79C0408 is the first radiation-hard-
• Excellent Single Event Effects
ened 4 Megabit MCM EEPROM for space applications. The
- SEL > 120 MeV/mg/cm2
79C0408 uses four 1 Megabit high-speed CMOS die to yield a
- SEU > 90 MeV/mg/cm2 read mode
4 Megabit product. The 79C0408 is capable of in-system elec-
- SEU = 18 MeV/mg/cm2 write mode
trical Byte and Page programmability. It has a 128 bytes Page
• Package:
Programming function to make its erase and write operations
• - 40 pin RAD-PAK® flat pack
faster. It also features Data Polling and a Ready/Busy signal to
• - 40 pin X-Ray PakTM flat pack
indicate the completion of erase and programming operations.
• - 40 pin Rad-Tolerant flat pack
In the 79C0408, hardware data protection is provided with the
• High speed:
RES pin, in addition to noise protection on the WE signal.
- 120, 150, and 200 ns maximum access times
Software data protection is implemented using the JEDEC
available
optional standard algorithm.
• Data Polling and Ready/Busy signal
• Software data protection
Maxwell Technologies' patented RAD-PAK® packaging technol-
• Write protection by RES pin
ogy incorporates radiation shielding in the microcircuit pack-
• High endurance
age. It eliminates the need for box shielding while providing
- 10,000 erase/write (in Page Mode),
the required radiation shielding for a lifetime in orbit or space
- 10 year data retention
mission. In a GEO orbit, the RAD-PAK® package provides
• Page write mode: 1 to 128 byte page
greater than 100 krad (Si) radiation dose tolerance. This prod-
• Low power dissipation
uct is available with screening up to Class K.
- 80 mW/MHz active mode
- 440 µ W standby mode
DataShee
DataSheet4U.com
10.13.04 Rev 15
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
All data sheets are subject to change without notice 1
©2004 Maxwell Technologies
All rights reserved.
DataSheet4 U .com






79C0408 Datasheet, Funktion
www.DataSheet4U.com
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
et4U.com
PARAMETER
TABLE 8. 79C0408 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
(V
CC
=
5V
±
10%,
TA
=
-55
TO
+125°
C)
SYMBOL
SUBGROUPS
MIN1
MAX
Output Enable to Write Setup Time
-120
-150
-200
tOES 9, 10, 11
0
0
0
--
--
--
Output Enable Hold Time
-120
-150
-200
tOEH 9, 10, 11
0
0
0
--
--
--
Write Cycle Time2
-120
-150
-200
tWC 9, 10, 11
--
--
--
10
10
10
Data Latch Time
-120
-150
-200
tDL 9, 10, 11
250
300
400
--
--
--
Byte Load Window
-120
-150
-200
tBL 9, 10, 11
100
100
200
--
--
--
Byte Load Cycle
-120
-150
-200
DataSheett4BLUC.com 9, 10, 11
0.55
0.55
0.95
30
30
30
Time to Device Busy
-120
-150
-200
tDB 9, 10, 11
100
120
170
--
--
--
Write Start Time3
-120
-150
-200
tDW 9, 10, 11
150
150
250
--
--
--
RES to Write Setup Time
-120
-150
-200
tRP 9, 10, 11
100
100
200
--
--
--
VCC to RES Setup Time4
-120
-150
-200
tRES 9, 10, 11
1
1
3
--
--
--
UNIT
ns
ns
ms
ns
µs
µs
ns
ns
µs
µs
1. Use this divice in a longer cycle than this value.
2. tWC must be longer than this value unless polling techniques or RDY/BUSY are used. This device automatically completes the
internal write operation within this value.
DataSheet4U.com
10.13.04 Rev 15
All data sheets are subject to change without notice 6
©2004 Maxwell Technologies
All rights reserved.
DataSheet4 U .com
DataShee

6 Page









79C0408 pdf, datenblatt
www.DataSheet4U.com
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
FIGURE 7. SOFTWARE DATA PROTECTION TIMING WAVEFORM(1) (IN PROTECTION MODE)
FIGURE 8. SOFTWARE DATA PROTECTION TIMING WAVEFORM(2) (IN NON-PROTECTION MODE)
et4U.com
DataSheet4U.com
DataShee
Toggle Bit Waveform
EEPROM APPLICATION NOTES
This application note describes the programming procedures for each EEPROM module (four in each MCM) and
details of various techniques to preserve data protection.
Automatic Page Write
Page-mode write feature allows from 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and
allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading
the first byte of data, the data load window opens 30 µ s for the second byte. In the same manner each additional byte
of data can be loaded within 30 µ s. In case CE and WE are kept high for 100 µ s after data input, the EEPROM enters
erase and write mode automatically and only the input data are written into the EEPROM.
DataSheet4U.com
DataSheet4 U .com
10.13.04 Rev 15
All data sheets are subject to change without notice 12
©2004 Maxwell Technologies
All rights reserved.

12 Page





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