|
|
Teilenummer | NP34N055IHE |
|
Beschreibung | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
Hersteller | NEC | |
Logo | ||
Gesamt 8 Seiten www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP34N055HHE, NP34N055IHE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-Channel MOS Field Effect Tran-
sistors designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 19 mΩ MAX. (VGS = 10 V, ID = 17 A)
• Low Ciss : Ciss = 1600 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP34N055HHE
TO-251
NP34N055IHE
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
55 V
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse) Note1
VGSS
±20 V
DataSheet4U.com
ID(DC)
±34 A
ID(pulse)
±136
A
Total Power Dissipation (TA = 25 °C)
PT
1.2 W
Total Power Dissipation (TC = 25 °C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT 88 W
IAS 34 / 27 / 10 A
EAS 11 / 72 / 100 mJ
Channel Temperature
Tch 175 °C
Storage Temperature
Tstg –55 to + 175 °C
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.70 °C/W
125 °C/W
DataShee
DataSheet4U.com
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14153EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
DataSheet4 U .com
The mark 5 shows major revised points.
©
1999,2000
www.DataSheet4U.com
PACKAGE DRAWINGS (Unit : mm)
1)TO-251 (MP-3)
6.5±0.2
5.0±0.2
2.3±0.2
0.5±0.1
NP34N055HHE, NP34N055IHE
2)TO-252 (MP-3Z)
6.5±0.2
5.0±0.2
2.3±0.2
0.5±0.1
1.1±0.2
2.3 TYP.
0.5+−00..21
2.3 TYP.
0.5+−00..21
1.1±0.2
2.3 TYP.
0.9 MAX. 0.8 MAX.
2.3 TYP.
0.8 TYP.
et4U.com
EQUIVALENT CIRCUIT
Drain
DataSheet4U.com
Gate
Body
Diode
Gate
Protection
Diode
Source
DataShee
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
6
DataSheet4U.com
DataSheet4 U .com
Data Sheet D14153EJ3V0DS
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ NP34N055IHE Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
NP34N055IHE | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |