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PDF NP32N055ILE Data sheet ( Hoja de datos )
| Número de pieza | NP32N055ILE | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE, NP32N055ILE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A)
• Low Ciss : Ciss = 1300 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HLE
TO-251
NP32N055ILE
TO-252
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°CD) ataSheet4U.com
Drain to Source Voltage
VDSS
55 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±32
±100
A
A
Total Power Dissipation (TA = 25°C)
PT
1.2 W
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT 66 W
IAS
28 / 21 / 8
A
EAS
7.8 / 44 / 64
mJ
Channel Temperature
Tch 175 °C
Storage Temperature
Tstg
–55 to +175
°C
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 V→0 V (See Figure 4.)
(TO-252)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
2.27 °C/W
125 °C/W
DataShee
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published
Printed in Japan
DataSheet4 U .com
D14137EJ3V0DS00 (3rd edition)
March 2001 NS CP(K)
The mark 5 shows major revised points.
©
1999
1 page  
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NP32N055HLE, NP32N055ILE
et4U.com
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
50
VGS = 4.5 V
40 5.0 V
10 V
30
20
10
ID = 16 A
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
VGS = 0 V
f = 1 MHz
Figure15. SWITCHING CHARACTERISTICS
1000
1000
Ciss 100 tf
td(off)
Coss
td(on)
100 Crss 10 tr
DataSheet4U.com
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1
0.1 1
10 100
ID - Drain Current - A
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1.0 10 100
IF - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
14
60 VGS 12
VDD = 44 V
28 V
11 V
40
10
8
6
20 4
VDS
2
ID = 32 A
0
0 4 8 12 16 20 24 28 32
QG - Gate Charge - nC
DataShee
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Data Sheet D14137EJ3V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP32N055ILE.PDF ] | |
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