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NP32N055HLE Schematic ( PDF Datasheet ) - NEC

Teilenummer NP32N055HLE
Beschreibung SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Hersteller NEC
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Gesamt 8 Seiten
NP32N055HLE Datasheet, Funktion
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE, NP32N055ILE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 24 mMAX. (VGS = 10 V, ID = 16 A)
RDS(on)2 = 29 mMAX. (VGS = 5.0 V, ID = 16 A)
Low Ciss : Ciss = 1300 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HLE
TO-251
NP32N055ILE
TO-252
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°CD) ataSheet4U.com
Drain to Source Voltage
VDSS
55 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±32
±100
A
A
Total Power Dissipation (TA = 25°C)
PT
1.2 W
Total Power Dissipation (TC = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
PT 66 W
IAS
28 / 21 / 8
A
EAS
7.8 / 44 / 64
mJ
Channel Temperature
Tch 175 °C
Storage Temperature
Tstg
–55 to +175
°C
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25°C, RG = 25 , VGS = 20 V0 V (See Figure 4.)
(TO-252)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
2.27 °C/W
125 °C/W
DataShee
DataSheet4U.com
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published
Printed in Japan
DataSheet4 U .com
D14137EJ3V0DS00 (3rd edition)
March 2001 NS CP(K)
The mark 5 shows major revised points.
©
1999






NP32N055HLE Datasheet, Funktion
www.DataSheet4U.com
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
NP32N055HLE, NP32N055ILE
2) TO-252 (MP-3Z)
6.5±0.2
5.0±0.2
4
123
1.3 MAX.
2.3±0.2
0.5±0.1
2.3 2.3
0.6±0.1
0.6±0.1
1.Gate
2.Drain
3.Source
4.Fin (Drain)
6.5±0.2
5.0±0.2
4
2.3±0.2
0.5±0.1
123
1.3 MAX.
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
et4U.com
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
DataSheet4U.com
DataShee
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
DataSheet4U.6com
DataSheet4 U .com
Data Sheet D14137EJ3V0DS

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