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PDF M74DW66500B Data sheet ( Hoja de datos )
| Número de pieza | M74DW66500B | |
| Descripción | 2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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M74DW66500B
2x 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and
32Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
■ MULTIPLE MEMORY PRODUCT
Figure 1. Package
– Two 64Mbit (8M x8 or 4M x16), Multiple Bank,
Page, Boot Block, Flash Memories
– 32Mbit (2M x 16) Pseudo Static RAM
■ SUPPLY VOLTAGE
– VCCF = VCCP = 2.7 to 3.3V
– VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70, 90ns
FBGA
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
LFBGA73 (ZA)
8 x 11.6mm
– Device Code: 227Eh + 2202h + 2201h
EACH FLASH MEMORY
■ ASYNCHRONOUS PAGE READ MODE
– Page Width: 4 Words
– Page Access: 25, 30ns
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– Random Access: 70, 90ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
– 4 Words/ 8 Bytes at-a-time Program
■ MEMORY BLOCKS
■ VPP/WP PIN for FAST PROGRAM and WRITE
PROTECT
■ TEMPORARY BLOCK UNPROTECTION
MODE
– Quadruple Bank Memory Array:
8Mbits + 24Mbits + 24Mbits + 8Mbits
– Parameter Blocks (at both Top and Bottom)
■ DUAL OPERATIONS
– While Program or Erase in a group of banks
(from 1 to 3), Read in any of the other banks
■ PROGRAM/ERASE SUSPEND and RESUME
MODES
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
■ ACCESS TIME: 70ns
■ BYTE CONTROL: UB/LB
■ PROGRAMMABLE PARTIAL ARRAY
■ 8 WORD PAGE ACCESS CAPABILITY: 18ns
(max)
– Faster Production/Batch Programming
■ LOW STANDBY CURRENT: 100µA
DataShee
September 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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Figure 3. LFBGA Connections (Top view through package)
M74DW66500B
1 2 3 4 5 6 7 8 9 10
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A NC
NC
B NC
C NC
NC NC
A7
VPP
LBS /WP
W
A8 A11
NC
D
A3
A6
UBS
RPF
E2S
A19
A12
A15
E A2 A5 A18 RB A20 A9 A13 A21
F
NC A1
A4 A17
A10 A14 EF2 NC
G
NC
A0
VSS
DQ1
DQ6
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NC
A16
NC
H
EF1
G
DQ9
DQ3
DQ4
DQ13
DQ15
/A-1
BYTE
J
E1S
DQ0
DQ10
VCCF
VCCS
DQ12
DQ7
VSS
K
DQ8
DQ2
DQ11
NC
DQ5
DQ14
M NC
NC NC
NC
N NC
NC
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AI08515
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M74DW66500B
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
Table 3. Absolute Maximum Ratings
Symbol
Parameter
TA Ambient Operating Temperature (1)
TBIAS
Temperature Under Bias
TSTG
Storage Temperature
VIO Input or Output Voltage
VCCF
Flash Supply Voltage
VID Identification Voltage
VPPF
Program Voltage
VCCP
PSRAM Supply Voltage
Note: 1. Depends on range.
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Min
–40
–50
–65
–0.5
–0.6
–0.6
–0.6
–0.5
Value
Max
85
125
150
VCCF +0.3
4
13.5
13.5
3.6
Unit
°C
°C
°C
V
V
V
V
V
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