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PDF STP6NB90 Data sheet ( Hoja de datos )
| Número de pieza | STP6NB90 | |
| Descripción | N - CHANNEL 900V - 1.7ohm - 5.8A - TO-220/TO-220FP PowerMESH MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP6NB90
® STP6NB90FP
N - CHANNEL 900V - 1.7Ω - 5.8A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST P6N B90
ST P6N B90 FP
900 V
900 V
<2 Ω
<2 Ω
5.8 A
5.8 A
s TYPICAL RDS(on) = 1.7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
3
2
1
3
2
1
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
TO-220
TO-220FP
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.
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APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM (•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulat ion W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
June 1999
Value
STP6NB90 STP6NB90FP
900
900
± 30
5.8 5.8(*)
3.6 3.6(*)
23 23
135 40
0.92
0.32
4.5 4.5
2000
-65 to 150
150
( 1) ISD ≤ 6Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /o C
V/ns
V
oC
oC
1/9
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Gate Charge vs Gate-source Voltage
Capacitance Variations
STP6NB90/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
et4U.com
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DataShee
Source-drain Diode Forward Characteristics
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5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STP6NB90.PDF ] | |
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