DataSheet39.com

What is STP6NB50FP?

This electronic component, produced by the manufacturer "ST Microelectronics", performs the same function as "N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET".


STP6NB50FP Datasheet PDF - ST Microelectronics

Part Number STP6NB50FP
Description N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
Manufacturers ST Microelectronics 
Logo ST Microelectronics Logo 


There is a preview and STP6NB50FP download ( pdf file ) link at the bottom of this page.





Total 9 Pages



Preview 1 page

No Preview Available ! STP6NB50FP datasheet, circuit

www.DataSheet4U.com
STP6NB50
STP6NB50FP
N - CHANNEL ENHANCEMENT MODE
PowerMESHMOSFET
TYPE
V DSS
RDS(on)
ID
STP6NB50
STP6NB50FP
500 V
500 V
< 1.5
< 1.5
5.8 A
3.4 A
s TYPICAL RDS(on) = 1.35
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
3
2
1
3
2
1
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
TO-220
TO-220FP
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
INTERNAL SCHEMATIC DIAGRAM
and switching characteristics.
DataSheet4U.com
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS Gat e-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM ( )
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
March 1998
Value
STP6NB50 STP6NB50FP
500
500
± 30
5.8 3.4
3.7 2.1
23.2
23.2
100 35
0.8 0.28
4.5 4.5
-- 2000
-65 to 150
150
(1) ISD 6A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
Uni t
V
V
V
A
A
A
W
W/oC
V/ ns
oC
oC
oC
1/9
DataSheet4U.com
DataShee
DataSheet4 U .com

line_dark_gray
STP6NB50FP equivalent
www.DataSheet4U.com
Gate Charge vs Gate-source Voltage
Capacitance Variations
STP6NB50/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
et4U.com
DataSheet4U.com
DataShee
Source-drain Diode Forward Characteristics
DataSheet4U.com
DataSheet4 U .com
5/9


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STP6NB50FP electronic component.


Information Total 9 Pages
Link URL [ Copy URL to Clipboard ]
Download [ STP6NB50FP.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
STP6NB50FPThe function is N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET. ST MicroelectronicsST Microelectronics

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

STP6     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search