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Teilenummer | XL1002 |
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Beschreibung | 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier | |
Hersteller | Mimix Broadband | |
Logo | ||
Gesamt 8 Seiten www.DataSheet4U.com
20.0-36.0 GHz GaAs MMIC
Low Noise Amplifier
March 2005 - Rev 01-Mar-05
Features
Balanced Design
Excellent Input/Output Match
Self-biased Architecture
23.0 dB Small Signal Gain
2.6 dB Noise Figure
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
L1002
General Description
Mimix Broadband’s three stage balanced 20.0-36.0
GHz GaAs MMIC low noise amplifier has a small signal
Absolute Maximum Ratings
gain of 23.0 dB with a noise figure of 2.6 dB across the
band.This MMIC uses Mimix Broadband’s 0.15 µm
Supply Voltage (Vd)
+6.0 VDC
GaAs PHEMT device model technology, and is based
Supply Current (Id)
120 mA
upon electron beam lithography to ensure high
Input Power (Pin)
+15.0 dBm
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table1
backside via holes and gold metallization to allow
Channel Temperature (Tch) MTTF Table1
either a conductive epoxy or eutectic solder dieDataSheet4U.co(m1) Channel temperature affects a device's MTBF. It is
attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
recommended to keep channel temperature as low as
possible for maximum life.
and VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)3
Output Return Loss (S22)3
Small Signal Gain (S21)3
Gain Flatness (∆S21)
Reverse Isolation (S12)3
Noise Figure (NF) 3
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (V5)
Supply Current (Id)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
mA
Min.
20.0
8.0
15.0
18.0
-
40.0
-
-
-
-
-
(2) See plots for additional information.
(3) Unless otherwise indicated min/max over 20.0-36.0 GHz and biased at Vd=5V, Id=85mA.
Typ.
-
10.0
18.0
23.0
+/-1.5
45.0
2.6
+4.0 2
+16.02
+5.0
85
Max.
36.0
-
-
-
-
-
4.0
-
-
+5.5
95
DataShee
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Page 1 of 8
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
DataSheet4U.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
DataSheet4 U .com
DataSheet4U.com
www.DataSheet4U.com
20.0-36.0 GHz GaAs MMIC
Low Noise Amplifier
March 2005 - Rev 01-Mar-05
L1002
App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only
requires a single bias voltage. All DC pads (V1 through V8) are tied together on-chip, even though V1 or V5 are shown as
main connections, any of the eight DC pads may be used to bias the device. Bias is nominally V1 or V5=5V, Id=85 mA.
App Note [2] Bias Arrangement - The DC pad at the top (V1) should be connected to one DC bypass capacitor
(~100-200 pf ) and the DC pad at the bottom (V5) should be connected using another DC bypass capacitor
(~100-200 pf ). Additional DC bypass capacitance (~0.01 pf ) is also recommended. Capacitance should be as close to the
device as possible.
MTTF Table
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
et4U.com
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
Rth MTTF Hours
87.7 deg Celsius
88.4° C/W
1.56E+10
110.1 deg Celsius 94.9° C/W
1.05E+09
132.3 deg Celsius 100.8° C/W
9.83E+07
Bias Conditions:DVa1toarSVh5e=5e.t04VU, Id.c=o8m5 mA
FITs
6.42E-02
9.50E-01
1.02E+01
DataShee
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Page 6 of 8
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
DataSheet4U.com
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
DataSheet4 U .com
DataSheet4U.com
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ XL1002 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
XL1000 | 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier | Mimix Broadband |
XL1000-BD | Low Noise Amplifier | MA-COM |
XL1001 | 17.0-35.0 GHz GaAs MMIC Low Noise Amplifier | Mimix Broadband |
XL1002 | 20.0-36.0 GHz GaAs MMIC Low Noise Amplifier | Mimix Broadband |
XL1002-BD | Low Noise Amplifier | MA-COM |
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