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Teilenummer | XL1005 |
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Beschreibung | 5.0-20.0 GHz GaAs MMIC Low Noise Amplifier | |
Hersteller | Mimix Broadband | |
Logo | ||
Gesamt 6 Seiten www.DataSheet4U.com
5.0-20.0 GHz GaAs MMIC
Low Noise Amplifier
May 2006 - Rev 10-May-06
Features
Wideband Low Noise Amplifier
13.0 dB Small Signal Gain
2.2 dB Noise Figure
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
L1005
General Description
Mimix Broadband’s single stage 5.0-20.0 GHz GaAs
MMIC low noise amplifier has a small signal gain of 13.0
Absolute Maximum Ratings
dB with a noise figure of 2.2 dB across the band.This
Supply Voltage (Vd1)
+5.5 VDC
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
Supply Current (Id)
120 mA
device model technology, and is based upon electron
Gate Bias Voltage (Vg1)
+0.3 VDC
beam lithography to ensure high repeatability and
Gate Bias Voltage (Vg2)
TBD
uniformity.The chip has surface passivation to protect
Input Power (Pin)
+15.0 dBm
and provide a rugged part with backside via holes and
Storage Temperature (Tstg) -65 to +165 OC
gold metallization to allow either a conductive DepaotaxSyheet4U.coOmperating Temperature (Ta) -55 to MTTF Table1
or eutectic solder die attach process.This device is well
Channel Temperature (Tch) MTTF Table1
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
(1) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg1)
Gate Bias Voltage (Vg2)
Supply Current (Id) (Vd=5.0V, Vg1=-0.3V, Vg2=1.5V)
Units Min. Typ. Max.
GHz 5.0
- 20.0
dB - 7.0 -
dB - 14.0 -
dB - 13.0 -
dB - +/-2.0 -
dB - TBD -
dB - 2.2 -
dBm - +16.0 -
dBm - +26.0 -
VDC - +5.0 -
VDC - -0.3 -
VDC - +1.5 -
mA - 30 -
DataShee
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Page 1 of 6
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
DataSheet4U.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
DataSheet4 U .com
DataSheet4U.com
www.DataSheet4U.com
5.0-20.0 GHz GaAs MMIC
Low Noise Amplifier
May 2006 - Rev 10-May-06
Handling and Assembly Information
L1005
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
et4U.com
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
DataSheet4U.com
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible.The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
Germanium should be avoided).The work station temperature should be 310 C+- 10 C. Exposure to these
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Page 6 of 6
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
DataSheet4U.com
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
DataSheet4 U .com
DataSheet4U.com
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ XL1005 Schematic.PDF ] |
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