|
|
PDF MRF897 Data sheet ( Hoja de datos )
| Número de pieza | MRF897 | |
| Descripción | RF POWER TRANSISTOR NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MRF897 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large–signal, common emitter, class–AB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800– 970 MHz.
• Specified 24 Volt, 900 MHz Characteristics
Output Power = 30 Watts
Minimum Gain = 10 dB @ 900 MHz, class–AB
Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)
Maximum Intermodulation Distortion –30 dBc @ 30 Watts (PEP)
• Characterized with Series Equivalent Large–Signal Parameters from 800
to 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power
• Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal–
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF897/D
MRF897
30 W, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 395B–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 5 mAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
hFE
Cob
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Symbol
RθJC
Min
30
60
4.0
—
30
14
Value
30
60
4.0
4.0
105
0.60
– 65 to +150
Max
1.67
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ Max Unit
33 — Vdc
80 — Vdc
4.7 — Vdc
— 10.0 mAdc
80 120 —
21 28 pF
(continued)
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
DataSheet4 U .com
www.DataSheet4U.com
MRF897
1
www.DataSheet4U.com
1 page  
www.DataSheet4U.com
PACKAGE DIMENSIONS
K
J
H
–A–
U
12
34
Q 2 PL
0.51 (0.020) M T A M B M
–B–
5
G
D
N
E
C
–T–
SEATING
PLANE
STYLE 1:
PIN 1. BASE
2. BASE
3. COLLECTOR
4. COLLECTOR
5. EMITTER
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.739 0.750
B 0.240 0.260
C 0.165 0.198
D 0.055 0.065
E 0.055 0.070
G 0.110 0.130
H 0.079 0.091
J 0.003 0.005
K 0.180 0.220
N 0.315 0.330
Q 0.125 0.135
U 0.560 BSC
MILLIMETERS
MIN MAX
18.77 19.05
6.10 6.60
4.19 5.03
1.40 1.65
1.40 1.78
2.79 3.30
2.01 2.31
0.08 0.13
4.57 5.59
8.00 8.38
3.18 3.42
14.22 BSC
CASE 395B–01
ISSUE A
MOTOROLA RF DEVICE DATA
DataSheet4 U .com
www.DataSheet4U.com
MRF897
5
www.DataSheet4U.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MRF897.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MRF890 | NPN SILICON RF POWER TRANSISTOR |  Advanced Semiconductor |
| MRF891 | RF POWER TRANSISTORS NPN SILICON | Motorola Semiconductors |
| MRF891S | RF POWER TRANSISTORS NPN SILICON | Motorola Semiconductors |
| MRF892 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |