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PDF MRF840 Data sheet ( Hoja de datos )
| Número de pieza | MRF840 | |
| Descripción | RF POWER TRANSISTOR NPN SILICON | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for 12.5 volt UHF large–signal, common–base amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
806 – 960 MHz.
• Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 10 Watts
Power Gain = 6.0 dB Min
Efficiency = 50% Min
• Series Equivalent Large–Signal Characterization
• Internally Matched Input for Broadband Operation
• Tested for Load Mismatch Stress at All Phase Angles with 20:1 VSWR @
15.5 Volt Supply and 50% RF Overdrive
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Silicon Nitride Passivated
Order this document
by MRF840/D
MRF840
10 W, 870 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VCEO
16
Vdc
VCBO
36
Vdc
VEBO
4.0
Vdc
IC 3.8 Adc
PD 40 Watts
0.32 W/°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg – 65 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
RθJC
Min
3.1
Typ Max
°C/W
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
16
—
— Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
36
—
— Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
— Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
—
— 2.0 mAdc
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
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MRF840
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