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PDF SUB75N03-07 Data sheet ( Hoja de datos )
| Número de pieza | SUB75N03-07 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
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SUP/SUB75N03-07
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
0.007 @ VGS = 10 V
30
0.01 @ VGS = 4.5 V
TO-220AB
ID (A)
75a
70
TO-263
D
G
DRAIN connected to TAB
G DS
Top View
GD S
Top View
SUB75N03-07
S
N-Channel MOSFET
SUP75N03-07 www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 100_C
L = 0.1 mH
TC = 25_C
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
30
"20
75a
64
240
75
280
120c
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)d
Free Air (TO-220AB)
Notes:
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70794
S-000652—Rev. D, 27-Mar-00
Symbol
RthJA
RthJC
Limit
40
62.5
1.25
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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Notice
Legal Disclaimer Notice
Vishay
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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Document Number: 91000
Revision: 08-Apr-05
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| PDF Descargar | [ Datasheet SUB75N03-07.PDF ] | |
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