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SUB75N08-09L Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer SUB75N08-09L
Beschreibung N-Channel MOSFET
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logoγ€€




Gesamt 5 Seiten
SUB75N08-09L Datasheet, Funktion
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New Product
SUP/SUB75N08-09L
Vishay Siliconix
N-Channel 75-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
75
rDS(on) (W)
0.009 @ VGS = 10 V
0.011 @ VGS = 4.5 V
ID (A)
"75 a
TO-220AB
D
TO-263
DRAIN connected to TAB
G
G DS
GD S
Top View
SUB75N08-09L
S
Top View
SUP75N08-09L
N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
75
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Maximum Power Dissipationb
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
ID
IDM
IAR
EAR
PD
TJ, Tstg
"75a
"66
"240
"75
280
250c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)d
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70870
S-60951β€”Rev. A, 26-Apr-99
Symbol
RthJA
RthJC
Limit
40
62.5
0.6
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
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