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Teilenummer | SUB75N08-10 |
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Beschreibung | N-Channel MOSFET | |
Hersteller | Vishay Siliconix | |
Logo | γ | |
Gesamt 4 Seiten www.DataSheet4U.com
SUP/SUB75N08-10
Vishay Siliconix
N-Channel 75-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
75
rDS(on) (W)
0.010
ID (A)
75a
TO-220AB
D
TO-263
DRAIN connected to TAB
G
G DS
GD S
Top View
SUB75N08-10
S
Top View
SUP75N08-10
N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
TC = 25_C
TC = 125_C
VGS
ID
"20
75a
55
Pulsed Drain Current
IDM 240
Avalanche Current
Repetitive Avalanche Energyb
Power Dissipation
L = 0.1 mH
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
IAR
EAR
PD
60
280
187c
3.7
Operating Junction and Storage Temperature Range
TJ, Tstg
β55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)d
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1β square PCB (FR-4 material).
Document Number: 70263
S-57253βRev. B, 24-Feb-98
Symbol
RthJA
RthJC
Limit
40
62.5
0.8
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ SUB75N08-10 Schematic.PDF ] |
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