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PDF SUB85N04-03 Data sheet ( Hoja de datos )
| Número de pieza | SUB85N04-03 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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SUP/SUB85N04-03
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.0035 @ VGS = 10 V
0.0053 @ VGS = 4.5 V
ID (A)
85 a
TO-220AB
D
TO-263
DRAIN connected to TAB
GD S
Top View
SUP85N04-03
G DS
Top View
SUB85N04-03
G
S
N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
"20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Maximum Power Dissipationb
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
ID
IDM
IAR
EAR
PD
TJ, Tstg
85a
85a
240
75
280
250c
3.75
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)d
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
Symbol
RthJA
RthJC
Limit
40
62.5
0.6
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
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New Product
SUP/SUB85N04-03
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC – Ambient Temperature (_C)
1000
100
10
1
0.1
0.1
Safe Operating Area
Limited
by rDS(on)
TC = 25_C
Single Pulse
1 10
VDS – Drain-to-Source Voltage (V)
10 ms
100 ms
1 ms
10 ms
100 ms
dc
100
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 DutyCycle=0.5www.DataSheet4U.com
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71124
S-00654—Rev. B, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
2-5
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