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PDF SUB85N04-04 Data sheet ( Hoja de datos )
| Número de pieza | SUB85N04-04 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
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SUP/SUB85N04-04
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.004 @ VGS = 10 V
ID (A)
85 a
TO-220AB
D
TO-263
DRAIN connected to TAB
G
GD S
Top View
Ordering Information
SUP85N04-04
SUP85N04-04—E3 (Lead (Pb)-Free)
G DS
Top View
Ordering Information
SUB85N04-04
SUB85N04-04—E3 (Lead (Pb)-Free)
S
N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
20
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 125_C
Avalanche Current
Repetitive Avalanche Energyb
L = 0.1 mH
Maximum Power Dissipationb
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
ID
IDM
IAR
EAR
PD
TJ, Tstg
85a
85a
240
70
211
250c
3.75
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)d
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
Symbol
RthJA
RthJC
Limit
40
62.5
0.6
Unit
_C/W
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1
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THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC − Ambient Temperature (_C)
SUP/SUB85N04-04
Vishay Siliconix
1000
100
10
1
0.1
0.1
Safe Operating Area
Limited
by rDS(on)
TC = 25_C
Single Pulse
1 10
VDS − Drain-to-Source Voltage (V)
10 ms
100 ms
1 ms
10 ms
100 ms
dc
100
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 DutyCycle=0.5www.DataSheet4U.com
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
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