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PDF SUB85N10-10 Data sheet ( Hoja de datos )
| Número de pieza | SUB85N10-10 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
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SUP85N10-10, SUB85N10-10
Vishay Siliconix
N-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100 0.0105 at VGS = 10 V
0.012 at VGS = 4.5 V
TO-220AB
ID (A)
85a
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
TO-263
D
DRAIN connected to TAB
GD S
Top View
SUP85N10-10
ORDERING INFORMATION
Package
TO-220AB
TO-263
G DS
Top View
SUB85N10-10
G
S
N-Channel MOSFET
Lead (Pb)-free
SUP85N10-10-E3
SUB85N10-10-E3
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 125 °C
ID
IDM
Avalanche Current
Single Pulse Avalanche Energyb
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C (TO-220AB and TO-263)
TA = 25 °C (TO-263)d
Operating Junction and Storage Temperature Range
PD
TJ, Tstg
Limit
100
± 20
85a
60a
240
75
280
250c
3.75
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve fo voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
PCB Mount (TO-263)d
Free Air (TO-220AB)
Symbol
RthJA
RthJC
Limit
40
62.5
0.6
Document Number: 71141
S10-0107-Rev. E, 18-Jan-10
Unit
V
A
mJ
W
°C
Unit
°C/W
www.vishay.com
1
1 page  
THERMAL RATINGS
100
SUP85N10-10, SUB85N10-10
Vishay Siliconix
1000
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
100
Limited
10 by RDS(on)*
1 TC = 25 °C
Single Pulse
10 µs
100 µs
1 ms
10 ms
100 ms, DC
0.1
0.1
1
10 100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71141.
Document Number: 71141
S10-0107-Rev. E, 18-Jan-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SUB85N10-10.PDF ] | |
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