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Teilenummer | SUB40N06-25L |
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Beschreibung | N-Channel MOSFET | |
Hersteller | Vishay Siliconix | |
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Gesamt 4 Seiten SUP/SUB4w0wNw.D0ata6Sh-ee2t4U5.cLom
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.022 @ VGS = 10 V
0.025 @ VGS = 4.5 V
ID (A)
40
40
TO-220AB
TO-263
D
DRAIN connected to TAB
GD S
Top View
SUP40N06-25L
G DS
Top View
SUB40N06-25L
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(TJ = 175_C)
Pulsed Drain Current
TC = 25_C
TC = 100_C
Avalanche Current
Repetitive Avalanche Energya
L = 0.1 mH
Power Dissipation
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)c
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
60
"20
40
25
100
40
80
90c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. Surface Mounted on FR4 Board, t v 10 sec.
PCB Mount (TO-263)c
Free Air (TO-220AB)
Document Number: 70288
S-57253—Rev. C, 24-Feb-98
Symbol
RthJA
RthJC
Limit
40
80
1.6
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ SUB40N06-25L Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
SUB40N06-25L | N-Channel MOSFET | Vishay Siliconix |
SUB40N06-25L | Logic Level | Vishay Siliconix |
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