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K2225 Schematic ( PDF Datasheet ) - Hitachi Semiconductor

Teilenummer K2225
Beschreibung 2SK2225
Hersteller Hitachi Semiconductor
Logo Hitachi Semiconductor Logo 



Gesamt 9 Seiten
		
K2225 Datasheet, Funktion
www.DataSheet4U.com
2SK2225
Silicon N-Channel MOS FET
Application
High speed power switching
Features
High breakdown voltage (VDSS = 1500 V)
High speed switching
Low drive current
No Secondary Breakdown
Suitable for Switching regulator, DC-DC converter
Outline
TO-3PFM
ADE-208-140
1st. Edition
D
G1
2
3
1. Gate
2. Drain
3. Source
S






K2225 Datasheet, Funktion
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Reverse Drain Current vs.
Source to Drain Voltage
5
Pulse Test
4
3
2
1 10 V, 15 V
VGS = 0, –5 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
Tc = 25°C
0.3 0.2
0.1
0.03
0.01
10 µ
0.1
0.05
0.02
0.01 1shot pulse
100 µ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 2.50 °C/W, Tc = 25 °C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
6

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