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STQ1NK60ZR Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer STQ1NK60ZR
Beschreibung N-CHANNEL MOSFET
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 18 Seiten
STQ1NK60ZR Datasheet, Funktion
STN1NK60Z,
STQ1NK60ZR
N-channel 600 V, 13 Ω typ., 0.3 A Zener-protected SuperMESH™
Power MOSFETs in SOT-223 and TO-92 packages
Datasheet - production data
Features
4
3
2
1
SOT-223
TO-92 (Ammopak)
Figure 1. Internal schematic diagram
D(2,4)
G(1)
S(3)
AM01476v1
Order codes
VDS RDS(on)max ID PTOT
STN1NK60Z
600 V
STQ1NK60ZR-AP
15
3.3 W
0.3 A
3W
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
ESD improved capability
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Order codes
STN1NK60Z
STQ1NK60ZR-AP
Table 1. Device summary
Marking
Package
1NK60Z
1NK60ZR
SOT-223
TO-92
Packaging
Tape and reel
Ammopak
July 2014
This is information on a product in full production.
DocID9509 Rev 14
1/18
www.st.com






STQ1NK60ZR Datasheet, Funktion
Electrical characteristics
STN1NK60Z, STQ1NK60ZR
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for SOT-223
Figure 3. Thermal impedance for SOT-223
K
δ=0.5
SOT-223
Figure 4. Safe operating area for TO-92
0.2
0.1
10-1
0.05
0.02
0.01
Single pulse
10-2
10-3
10-2
10-1
t < 30s
Zthj-pcb=K*Rthj-pcb,
Rthj-pcb=62.5°C/W
100 101 102 tp(s)
Figure 5. Thermal impedance for TO-92
Figure 6. Output characteristics
Figure 7. Transfer characteristics
6/18 DocID9509 Rev 14

6 Page









STQ1NK60ZR pdf, datenblatt
Package mechanical data
STN1NK60Z, STQ1NK60ZR
Figure 25. SOT-223 footprint (dimensions in mm)
0046067_N_footprint
12/18
DocID9509 Rev 14

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