(PDF) STQ1NC60R Datasheet - N-CHANNEL MOSFET

Número de pieza	STQ1NC60R
Descripción	N-CHANNEL MOSFET
Fabricantes	ST Microelectronics
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No Preview Available ! www.DataSheet4U.com STQ1NC60R N-CHANNEL 600V - 12Ω - 0.3A TO-92 PowerMESH™II Power MOSFET TYPE VDSS RDS(on) STQ1NC60R 600 V < 15 Ω s TYPICAL RDS(on) = 12 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED ID 0.3 A DESCRIPTION Using the latest high voltage MESH OVERLAY™II process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. TO-92 BULK TO-92 (AMMOPACK) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s LOW SWITCH MODE POWER SUPPLIES (SMPS) s BATTERY CHARGER ORDERING INFORMATION SALES TYPE MARKING STQ1NC60R Q1NC60R STQ1NC60R-AP Q1NC60R PACKAGE TO-92 TO-92 wwJuwly 2.D00a3taSheet4U.com PACKAGING BULK AMMOPACK 1/9 1 page www.DataSheet4U.com STQ1NC60R Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics www.DataSheet4U.com 5/9 5 Page

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PDF STQ1NC60R Data sheet ( Hoja de datos )