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PDF STQ1HNC60 Data sheet ( Hoja de datos )
| Número de pieza | STQ1HNC60 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STQ1HNC60
N-CHANNEL 600V - 7Ω - 0.4A TO-92
PowerMesh™II MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STQ1HNC60
600 V
<8Ω
0.4 A
s TYPICAL RDS(on) = 7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
TO-92
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE LOW POWER SUPPIES
(SMPS)
s CFL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
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Value
Unit
600 V
600 V
± 30 V
0.4 A
0.25 A
1.6 A
3.5 W
0.028
W/°C
3.5 V/ns
–65 to 150
°C
150 °C
(1)ISD ≤ 0.4 A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
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STQ1HNC60
DIM.
A
B
C
D
E
F
G
MIN.
4.58
4.45
3.2
12.7
0.4
0.35
TO-92 MECHANICAL DATA
mm
TYP.
1.27
MAX.
5.33
5.2
4.2
MIN.
0.180
0.175
0.126
0.500
0.51 0.016
0.14
inch
TYP.
0.050
MAX.
0.210
0.204
0.165
0.020
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STQ1HNC60.PDF ] | |
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