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P50NE10L Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer P50NE10L
Beschreibung STP50NE10L
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 8 Seiten
P50NE10L Datasheet, Funktion
eet4U.com® STP50NE10L
Sh N - CHANNEL 100V - 0.020- 50A TO-220
ata STripFETPOWER MOSFET
w.DTYPE
VDSS
RDS(on)
w STP50NE10L
100 V <0.025
wwww.DataSheet4Us.comTYPICAL RDS(on) = 0.020
ID
50 A
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
ms LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
oCHARACTERIZATION
.cDESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
USize" strip-based process. The resulting
t4transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
etherefore a remarkable manufacturing
ereproducibility.
hAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
Ss SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
tas DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
aABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
.DABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wVDS Drain-source Voltage (VGS = 0)
wVDGR Drain- gate Voltage (RGS = 20 k)
VGS
wID
mID
oIDM()
.cPtot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
t4UDerating Factor
edv/dt (1) Peak Diode Recovery voltage slope
eTstg Storage Temperature
hTj Max. Operating Junction Temperature
taS() Pulse width limited by safe operating area
www.DaMay 1999
Value
Unit
100 V
100 V
± 20
V
50 A
35 A
200 A
150 W
1 W/oC
6 V/ns
-65 to 175
oC
175 oC
(1) ISD 50 A, di/dt 275 A/µs, VDD V(BR)DSS, Tj TJMAX
1/8






P50NE10L Datasheet, Funktion
STP50NE10L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
www.DataSheet4U.com
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8

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