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PDF STE110NA20 Data sheet ( Hoja de datos )
| Número de pieza | STE110NA20 | |
| Descripción | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STE110NA20 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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TYPE
STE110NA20
STE110NA20
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
VDSS
200 V
RDS(on)
< 0.019 Ω
ID
110 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.015 Ω
s HIGH CURRENT POWER MODULE
s AVALANCHE RUGGED TECHNOLOGY
s VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s EASY TO MOUNT
s SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s EXTREMELY LOW Rth (Junction to case)
s VERY LOW INTERNAL PARASITIC
INDUCTANCE
s ISOLATED PACKAGE UL RECOGNIZED
ISOTOP
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
VISO Insulation Withhstand Voltage (AC-RMS)
(•) Pulse width limited by safe operating area
March 1996
Value
200
200
± 30
110
73
440
450
3.6
-55 to 150
150
2500
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
V
1/8
1 page  
Capacitance Variations
STE110NA20
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STE110NA20.PDF ] | |
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