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JAN2N2919 Schematic ( PDF Datasheet ) - New England Semiconductor

Teilenummer JAN2N2919
Beschreibung (JAN2N2919 / JAN2N2920) Transistor
Hersteller New England Semiconductor
Logo New England Semiconductor Logo 




Gesamt 18 Seiten
JAN2N2919 Datasheet, Funktion
The documentation and process conversion
measures necessary to comply with this document
shall be completed by 3 October 2005.
INCH-POUND
MIL-PRF-19500/355K
3 July 2005
SUPERSEDING
MIL-PRF-19500/355J
8 July 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON,
TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN
silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500. Two levels of product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to TO-78), figure 2 (surface mount), figure 3 (JANHCA and
JANKCA die), figure 4 (JANHCB and JANKCB die).
* 1.3 Maximum ratings, unless otherwise specified, TC =+25°C.
PT (1)
TA = +25°C
PT (2)
TC = +25°C
IC
VCBO
VCEO
VEBO
One Both One Both
section sections section sections
TJ and TSTG
mW mW
mW
W mA V dc V dc V dc
°C
dc
300 600 750 1.25
70 60 6 -65 to +200
30
(1) For TA > +25°C, derate linearly 1.71 mW/°C, one section; 3.43 mW/°C, both sections.
(2) For TC > +25°C, derate linearly 4.286 mW/°C, one section; 7.14 mW/°C, both sections.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
[email protected]. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at http://assist.daps.dla.mil .
AMSC N/A
FSC 5961
www.DataSheet4U.com






JAN2N2919 Datasheet, Funktion
MIL-PRF-19500/355K
NOTES:
1. Die size---------
2. Die thickness---
3. Base pad--------
4. Emitter pad-----
5. Back metal-----
6. Top metal------
7. Back side------
8. Glassivation---
.018 x .018 inch (0.457 mm x 0.457 mm).
.008 ±.0016 inch (0.203 mm ±0.04 mm).
.0025 inch diameter (0.06 mm).
.003 inch diameter (0.076).
Gold, 6500 ±1950Å.
Aluminum, 19500 ±2500Å.
Collector.
SiO2, 7500 ± 1500Å.
FIGURE 4. Physical dimensions (JANHCB and JANKCB) B version die.
6

6 Page









JAN2N2919 pdf, datenblatt
MIL-PRF-19500/355K
4.5.7 Noise figure test. Noise figure shall be measured using a model no. 2173C/2181, Quan Tech Laboratories
test set, or equivalent. Conditions shall be as specified in table I.
4.5.8 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
1 Collector-base
cutoff current
2 Forward current
transfer ratio
Method
MIL-STD-750
Conditions
3036
Bias condition D,
VCB = 45 V dc
3076
VCE = 5 V dc; IC = 1 mA dc;
pulsed, see 4.5.1
Symbol
Limit
Min Max
ICBO2
100-percent of initial
value or 1 nA dc,
whichever is greater.
hFE3
±25 percent change
from initial reading.
12

12 Page





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