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PDF STE48NM60 Data sheet ( Hoja de datos )

Número de pieza STE48NM60
Descripción N-channel 600V 0.09 Ohm 48A ISOtop Mdmesh Power MOSFET
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STE48NM60 Hoja de datos, Descripción, Manual

STE48NM60
N-CHANNEL 600V - 0.09- 48A ISOTOP
MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STE48NM60
600V
< 0.11
48 A
TYPICAL RDS(on) = 0.09
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
June 2003
www.DataSheet4U.com
Value
Unit
600 V
600 V
±30 V
48 A
30 A
192 A
450 W
3.57 W/°C
15 V/ns
–65 to 150
°C
150 °C
(1) ISD 48A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.
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STE48NM60 pdf
STE48NM60
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
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Número de piezaDescripciónFabricantes
STE48NM60N-channel 600V 0.09 Ohm 48A ISOtop Mdmesh Power MOSFETST Microelectronics
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