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PDF STE48NM50 Data sheet ( Hoja de datos )

Número de pieza STE48NM50
Descripción N-CHANNEL Power MOSFET
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STE48NM50 Hoja de datos, Descripción, Manual

STE48NM50
N-CHANNEL 550V @ Tjmax - 0.08Ω - 48A ISOTOP
MDmesh™ MOSFET
Table 1: General Features
TYPE
VDSS
(@Tjmax)
RDS(on)
ID
STE48NM50
550V
< 0.1Ω
48 A
s TYPICAL RDS(on) = 0.08Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizon-
tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar competi-
tion’s products.
Figure 1: Package
ISOTOP
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE
STE48NM50
MARKING
E48NM50
PACKAGE
ISOTOP
PACKAGING
TUBE
March 2005
www.DataSheet4U.com
Rev. 2
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1 page




STE48NM50 pdf
STE48NM50
Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Source-Drain Diode Forward Char-
acteristics
5/9

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