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MSA-2085 Schematic ( PDF Datasheet ) - Hewlett-Packard

Teilenummer MSA-2085
Beschreibung (MSA-20xx) Cascadable Silicon Bipolar MMIC Amplifier
Hersteller Hewlett-Packard
Logo Hewlett-Packard Logo 




Gesamt 8 Seiten
MSA-2085 Datasheet, Funktion
Silicon Bipolar RFIC Amplifiers
Technical Data
Features
MSA-2011
• Surface Mount SOT-143
Package
• 3 dB Bandwidth:
DC to 1.0 GHz
• 16.2 dB Gain at 1 GHz
• 4.3 dB NF at 1 GHz
MSA-2035
• Hermetic Ceramic Package
• 3 dB Bandwidth:
DC to 1.1 GHz
• 17.3 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz
MSA-2085
• Plastic Microstrip Package
• 3 dB Bandwidth:
DC to 1.1 GHz
• 16.6 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz
MSA-2086
• Surface Mount Plastic
Microstrip Package
• 3 dB Bandwidth:
DC to 1.1 GHz
• 16.6 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz
MSA-2011
MSA-2035
MSA-2085
MSA-2086
MSA-20xx Series
Description
The MSA-20xx series are high
performance silicon bipolar RFIC
amplifiers designed to be
cascadable in 50 systems. The
stability factor of K > 1 contributes
to easy cascading in numerous
narrow and broadband IF and RF
commercial and industrial
applications.
The MSA series is fabricated using
a 10 GHz fT, 25 GHz FMAX, silicon
bipolar RFIC process which
utilizes nitride self-alignment, ion
implantation, and gold
metallization to achieve excellent
uniformity, performance, and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Package options include the
industry standard plastic surface
mount SOT-143 package, the
100 mil surface mountable
hermetic ceramic package, the
85 mil plastic microstripline
package, and the 85 mil surface
mountable plastic microstripline
package.






MSA-2085 Datasheet, Funktion
6
Typical Performance for MSA-2085 and MSA-2086
25
20
15
10
5
0
0.1
-55°C
25°C
85°C
125°C
1.0
FREQUENCY (GHz)
4.0
20
19
18
17
16
15
14
13
12
11
20
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
25 30 35
I d (mA)
16
40 mA
14
35 mA
12
30 mA
10
8 25 mA
6
20 mA
4
2
0
40 0.1
1.0
FREQUENCY (GHz)
4.0
Figure 1. Power Gain vs. Frequency at
Four Temperatures, ID = 32 mA.
Figure 2. Power Gain vs. Current at
25°C.
Figure 3. Typical P1dB vs. Frequency at
25°C.
5
4.5
4
3.5
3
0.1
17
GP
16
15 6
20 mA
40 mA
10 NF
9
P1dB
8
5
4
3
1.0
FREQUENCY (GHz)
7
4.0 -25
25
85
AMBIENT TEMPERATURE (°C)
40
-55°C
-25°C
25°C
30
85°C
20
10
0
0 1 2 34 5 6
VD (VOLTS)
Figure 4. Noise Figure vs. Frequency
at ID = 32 mA.
Figure 5. Power Gain, Noise Figure,
and P1dB vs. Temperature at 1 GHz and
ID = 32 mA.
Figure 6. ID vs. VD at Four
Temperatures.

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