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Teilenummer | BD130 |
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Beschreibung | NPN Silicon Transistor | |
Hersteller | Comset Semiconductors | |
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Gesamt 3 Seiten wwwB.DD1a3t0aSPhOeWetE4RUL.cIoNmENRPANRSIALNICDOSNWTIRTCAHNISNIGSTAOPRPLICATIONS
The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO-
3 metal case. It is intended for power switching circuits, series and
shunt regulators, output stages and high fidelity amplifiers.
U.comABSOLUTE MAXIMUM RATINGS
et4Symbol
Ratings
eVCEO
Collector-Emitter Voltage
ShVCBO
Collector-Base Voltage
taVCEX
Collector-Emitter Voltage
VBE=-1.5 V
aIC Collector Current
.DIB Base Current
wwwPT
Power Dissipation
@ TC = 45°
Value
60
100
100
15
7
100
Unit
V
V
V
A
A
Watts
TJ Junction Temperature
U.comTS Storage Temperature
www.DataSheet4COMSET SEMICONDUCTORS
-55 to +200 °C
1/3
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ BD130 Schematic.PDF ] |
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www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |