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PDF SST39LF800A Data sheet ( Hoja de datos )
| Número de pieza | SST39LF800A | |
| Descripción | (SST39xF200A/400A/800A) 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash | |
| Fabricantes | Silicon Storage Technology | |
| Logotipo |  |
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2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
A Microchip Technology Company
SST39VF200A / SST39VF400A / SST39VF800A
Data Sheet
The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K
x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with
SST proprietary, high-performance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better reliability and manufac-
turability compared with alternate approaches. The SST39LF200A/400A/800A
write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/
800A write (Program or Erase) with a 2.7-3.6V power supply. These devices con-
form to JEDEC standard pinouts for x16 memories.
Features:
• Organized as 128K x16 / 256K x16 / 512K x16
• Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF200A/400A/800A
– 2.7-3.6V for SST39VF200A/400A/800A
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
(typical values at 14 MHz)
– Active Current: 9 mA (typical)
– Standby Current: 3 µA (typical)
• Sector-Erase Capability
– Uniform 2 KWord sectors
• Block-Erase Capability
– Uniform 32 KWord blocks
• Fast Read Access Time
– 55 ns for SST39LF200A/400A/800A
– 70 ns for SST39VF200A/400A/800A
• Latched Address and Data
• Fast Erase and Word-Program
– Sector-Erase Time: 18 ms (typical)
– Block-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Word-Program Time: 14 µs (typical)
– Chip Rewrite Time:
2 seconds (typical) for SST39LF/VF200A
4 seconds (typical) for SST39LF/VF400A
8 seconds (typical) for SST39LF/VF800A
• Automatic Write Timing
– Internal VPP Generation
• End-of-Write Detection
– Toggle Bit
– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 48-lead TSOP (12mm x 20mm)
– 48-ball TFBGA (6mm x 8mm)
– 48-ball WFBGA (4mm x 6mm)
– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit
• All non-Pb (lead-free) devices are RoHS compliant
©2011 Silicon Storage Technology, Inc.
www.microchip.com
DS25001A
03/11
1 page  
A Microchip Technology Company
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
Data Sheet
TOP VIEW (balls facing down)
SST39VF200A
6
A2 A4 A6 NC NC NC WE# NC A9 A11
5
A1 A3 A7 NC
NC A10 A13 A14
4
A0 A5 NC
3
A8 A12 A15
CE# DQ8 DQ10
2
DQ4 DQ11 A16
VSS OE# DQ9 NC
1
NC DQ5 DQ6 DQ7
DQ0 DQ1 DQ2 DQ3 VDD DQ12 DQ13 DQ14 DQ15 VSS
AB C D E F G H J K L
TOP VIEW (balls facing down)
SST39LF/VF400A
6
A2 A4 A6 A17 NC NC WE# NC A9 A11
5
A1 A3 A7 NC
NC A10 A13 A14
4
A0 A5 NC
3
A8 A12 A15
CE# DQ8 DQ10
2
DQ4 DQ11 A16
VSS OE# DQ9 NC
1
NC DQ5 DQ6 DQ7
DQ0 DQ1 DQ2 DQ3 VDD DQ12 DQ13 DQ14 DQ15 VSS
AB C D E F G H J K L
TOP VIEW (balls facing down)
SST39LF/VF800A
6
A2 A4 A6 A17 NC NC WE# NC A9 A11
5
A1 A3 A7 NC
NC A10 A13 A14
4
A0 A5 A18
3
A8 A12 A15
CE# DQ8 DQ10
2
DQ4 DQ11 A16
VSS OE# DQ9 NC
1
NC DQ5 DQ6 DQ7
DQ0 DQ1 DQ2 DQ3 VDD DQ12 DQ13 DQ14 DQ15 VSS
AB C D E F G H J K L
Figure 4: Pin Assignments for 48-Ball WFBGA and 48-Bump XFLGA
©2011 Silicon Storage Technology, Inc.
5
DS25001A
03/11
5 Page 
A Microchip Technology Company
2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
4. SAX for Sector-Erase; uses AMS-A11 address lines
BAX for Block-Erase; uses AMS-A15 address lines
5. The device does not remain in Software Product ID mode if powered down.
6. With AMS-A1 = 0;
SST Manufacturer’s ID = 00BFH, is read with A0 = 0,
SST39LF/VF200A Device ID = 2789H, is read with A0 = 1.
SST39LF/VF400A Device ID = 2780H, is read with A0 = 1.
SST39LF/VF800A Device ID = 2781H, is read with A0 = 1.
7. Both Software ID Exit operations are equivalent
Data Sheet
Table 5: CFI Query Identification String1 for SST39LF200A/400A/800A and
SST39VF200A/400A/800A
Address
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
Data
0051H
0052H
0059H
0001H
0007H
0000H
0000H
0000H
0000H
0000H
0000H
Data
Query Unique ASCII string “QRY”
Primary OEM command set
Address for Primary Extended Table
Alternate OEM command set (00H = none exists)
Address for Alternate OEM extended Table (00H = none exits)
1. Refer to CFI publication 100 for more details.
T5.0 25001
Table 6: System Interface Information for SST39LF200A/400A/800A and SST39VF200A/
400A/800A
Address Data Data
1BH
0027H1 VDD Min (Program/Erase)
0030H1 DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
1CH
1DH
0036H
0000H
VDD Max (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
VPP min (00H = no VPP pin)
1EH
1FH
0000H VPP max (00H = no VPP pin)
0004H Typical time out for Word-Program 2N µs (24 = 16 µs)
20H 0000H Typical time out for min size buffer program 2N µs (00H = not supported)
21H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)
22H 0006H Typical time out for Chip-Erase 2N ms (26 = 64 ms)
23H 0001H Maximum time out for Word-Program 2N times typical (21 x 24 = 32 µs)
24H 0000H Maximum time out for buffer program 2N times typical
25H 0001H Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms)
26H 0001H Maximum time out for Chip-Erase 2N times typical (21 x 26 = 128 ms)
1. 0030H for SST39LF200A/400A/800A and 0027H for SST39VF200A/400A/800A
T6.2 25001
©2011 Silicon Storage Technology, Inc.
11
DS25001A
03/11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet SST39LF800A.PDF ] | |
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