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Teilenummer | SPP11N60CFD |
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Beschreibung | Cool MOS Power Transistor | |
Hersteller | Infineon Technologies | |
Logo | ||
Gesamt 12 Seiten heet4U.comCool MOS™ Power Transistor
taSFeature
a• New revolutionary high voltage technology
.D• Ultra low gate charge
ww• Periodic avalanche rated
w• Extreme dv/dt rated
SPP11N60CFD
VDS @ Tjmax
RDS(on)
ID
650
0.44
11
V
Ω
A
P-TO220-3-1
• High peak current capability
m• Intrinsic fast-recovery body diode
o• Extreme low reverse recovery charge
t4U.cType
Package
Ordering Code
SPP11N60CFD P-TO220-3-1 Q67040-S4618
Marking
11N60CFD
heeMaximum Ratings
SParameter
Symbol
taContinuous drain current
aTC = 25 °C
TC = 100 °C
ID
.DPulsed drain current, tp limited by Tjmax
wAvalanche energy, single pulse
ID = 5.5 A, VDD = 50 V
ID puls
EAS
wwAvalanche energy, repetitive tAR limited by Tjmax1) EAR
Value
11
7
28
340
0.6
Unit
A
mJ
ID = 11 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax
Reverse diode dv/dt
IS=11A, VDS=480V, Tj=125°C
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Page 1
omIAR
.cdv/dt
eet4UVGS
ShVGS
taPtot
www.DaTj , Tstg
11 A
40 V/ns
±20
±30
125
-55... +150
V
W
°C
2003-12-23
SPP11N60CFD
5 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
22
A
Vgs = 20V
Vgs = 8.5V
Vgs = 8V
18 Vgs = 7.5V
Vgs = 7V
16 Vgs = 6.5V
Vgs = 6V
14
12
10
8
6
4
2
0
0 4 8 12 16
20 V 26
VDS
6 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
2
Ω Vgs = 6V
Vgs = 6.5V
1.8 Vgs = 7V
Vgs = 7.5V
1.7 Vgs = 8V
Vgs = 8.5V
1.6 Vgs = 20V
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0 4 8 12 16 20 A 28
ID
7 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
2.6 SPP11N60CFD
Ω
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60
-20
98%
typ
20 60
100 °C
180
Tj
8 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
40
A
Tj = 25?C
30
25
Tj = 150?C
20
15
10
5
0
0 2 4 6 8 10 12 14 16 V 20
VGS
Page 6
2003-12-23
6 Page SPP11N60CFD
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 12
2003-12-23
12 Page | ||
Seiten | Gesamt 12 Seiten | |
PDF Download | [ SPP11N60CFD Schematic.PDF ] |
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