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Teilenummer | MJE13001L |
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Beschreibung | Transistors | |
Hersteller | SI Semiconductors | |
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Gesamt 3 Seiten mShenzhen SI Semiconductors Co., LTD.
.coMJE LOW VOLTAGE SERIES TRANSISTORS
Product Specification
MJE13001L
t4UFEATURES HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
WIDE SOA
heeAPPLICATION: SUITABLE FOR 110V CIRCUIT MODE:
FLUORESCENT LAMP
taS ELECTRONIC BALLAST
w.DaAbsolute Maximum Ratings Tc=25°C
ww PARAMETER
SYMBOL
VALUE
TO-92
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
mEmitter- Base Voltage
oCollector Current
.cTotal Power Dissipation
Junction Temperature
UStorage Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
400
200
9
0.6
7
150
-65-150
V
V
V
A
W
°C
°C
et4Electronic Characteristics Tc=25°C
eCHARACTERISTICS
SYMBOL
hCollector-Base Cutoff Current
ICBO
SCollector-Emitter Cutoff Current
ICEO
taCollector-Emitter Voltage
VCEO
Emitter -Base Voltage
VEBO
aCollector-Emitter Saturation Voltage
Vces
.DBase-Emitter Saturation Voltage
Vbes
wwwDC Current Gain
hFE
TEST CONDITION
VCB=400V
VCE=200V,IB=0
IC=10mA,IB=0
IE=1mA,IC=0
IC=50mA,IB=10mA
IC=0.1A,IB=0.02A
IC=0.3A,IB=0.1A
IC=50mA,IB=10mA
VCE=5V,IC=1mA
VCE=20V,IC=20mA
VCE=5V,IC=200mA
MIN
200
9
8
10
8
MAX
100
250
0.5
1.0
2.0
1.0
UNIT
A
A
V
V
V
V
40
Si semiconductors 2004.10
www.DataSheet4U1.com
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Seiten | Gesamt 3 Seiten | |
PDF Download | [ MJE13001L Schematic.PDF ] |
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