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PDF FW214 Data sheet ( Hoja de datos )
| Número de pieza | FW214 | |
| Descripción | Ultrahigh-Speed Switching Applications | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FW214 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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U . c o mOrdering number :EN5850
N-Channel Silicon MOS FET
D a t a S h e e t 4 Ultrahigh-Speed Switching AppliFcaWti2o1n4sFeatures
.· Low ON resistance.
w w w m· 2.5V drive.
Package Dimensions
unit:mm
2129
[FW214]
85
U.co1
5.0
4
e t 4Specifications
eAbsolute Maximum Ratings at Ta = 25˚C
0.595 1.27 0.43
hParameter
Drain-to-Source Voltage
SGate-to-Source Voltage
Drain Current (DC)
aDrain Current (pulse)
tAllowable Power Dissipation
Total Dissipation
aChannel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on ceramic board (1200mm2×0.8mm) 1unit
Mounted on ceramic board (1200mm2×0.8mm)
1:Source1
2:Gate1
3:Source2
4:Gate2
0.2 5:Drain2
6:Drain2
7:Drain1
8:Drain1
SANYO:SOP8
Ratings
20
±10
5
48
1.7
2.0
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
DElectrical Characteristics at Ta = 25˚C
.Parameter
wD-S Breakdown Voltage
Zero Gate Voltage Drain Current
wGate-to-Source Leak Current
mCutoff Current
oForward Transfer Admittance
w cStatic Drain-to-Source ON-State Resistance
U .Input Capacitance
4Output Capacitance
tReverse Transfer Capacitance
eTurn-ON Delay Time
eRise Time
hTurn-OFF Delay Time
SFall Time
aTotal Gate Charge
tGate-to-Source Charge
aGate-to-Drain ("Miller") Charge
. DDiode Forward Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=4V
ID=2A, VGS=2.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
VDS=10V, VGS=10V, ID=5A
IS=5A, VGS=0
Ratings
min typ
20
0.4
8 13
38
50
500
280
150
20
250
70
130
22
3
3
1.0
max
100
±10
1.3
50
70
1.2
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
SANYO Electric Co.,Ltd. Semiconductor Bussiwnewss HeadquartersTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
w 52698TS (KOTO) TA-0974 No.5850-1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FW214.PDF ] | |
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