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PDF STU14NA50 Data sheet ( Hoja de datos )
| Número de pieza | STU14NA50 | |
| Descripción | N-Channel Enhancement Mode Fast Power MOS Transistor | |
| Fabricantes | ST Microelectronics | |
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ww STU14NA50
STU14NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
VDSS
500 V
RDS(on)
< 0.36 Ω
ID
14 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.31 Ω
s EFFICIENT AND RELAIBLE MOUNTING
THROUGH CLIP
ms ± 30V GATE TO SOURCE VOLTAGE RATING
os REPETITIVE AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
.cs 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
UDESCRIPTION
t4The Max220TM package is a new high volume
power package exibiting the same footprint as the
eindustry standard TO-220, but designed to
accomodate much larger silicon chips, normally
esupplied in bigger packages. The increased die
capacity makes the device ideal to reduce
hcomponent count in multiple paralleled TO-220
designs and save board space with respect to
Slarger packages.
taAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
as DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
.DPOWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
wSymbol
Parameter
wVDS Drain-source Voltage (VGS = 0)
wVDGR Drain- gate Voltage (RGS = 20 kΩ)
123
Max220TM
INTERNAL SCHEMATIC DIAGRAM
Value
500
500
Unit
V
V
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1997
± 30
m14
o8.8
.c56
U160
et41.28
e-65 to 150
www.DataSh150
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STU14NA50
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
...
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