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G30N60 Schematic ( PDF Datasheet ) - ETC

Teilenummer G30N60
Beschreibung HGTG30N60
Hersteller ETC
Logo ETC Logo 




Gesamt 8 Seiten
G30N60 Datasheet, Funktion
www.DataSheet4U.com
Data Sheet
HGTG30N60A4
August 2003
File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49343.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG30N60A4
TO-247
G30N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Features
• >100kHz Operation at 390V, 30A
• 200kHz Operation at 390V, 18A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oC
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BACK METAL)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B1






G30N60 Datasheet, Funktion
www.DataSheet4U.com
HGTG30N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
10
FREQUENCY = 1MHz
8
6
CIES
4
2 COES
CRES
0
0
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
2.3
DUTY CYCLE < 0.5%, VGE =
PULSE DURATION = 250µs,
15V
TJ =
25oC
2.2
2.1
2.0
1.9
1.8
1.7
9
ICE = 60A
ICE = 30A
ICE = 15A
10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
16
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
100
0.50
0.20
0.10
10-1
0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
100
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
101
HGTP30N60A4D
DIODE TA49373
RG = 3
L = 200µH
+
- VDD = 390V
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
EOFF
10%
EON2
90%
ICE 10%
td(OFF)I tfI
trI
td(ON)I
FIGURE 21. SWITCHING TEST WAVEFORMS
©2003 Fairchild Semiconductor Corporation
HGTG30N60A4 Rev. B1

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