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TSAL7200 Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer TSAL7200
Beschreibung GaAs/GaAlAs IR Emitting Diode
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logo 




Gesamt 5 Seiten
TSAL7200 Datasheet, Funktion
TSAL7200
om Vishay Telefunken
t4U.c ¾GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1 )
ePackage
SheDescription
taTSAL7200 is a high efficiency infrared emitting diode
ain GaAlAs on GaAs technology, molded in a clear plas-
.Dtic package.
wIn comparison with the standard GaAs on GaAs
technology these emitters achieve more than 100 %
ww radiant power improvement at a similar wavelength.
94 8389
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
mideally suitable as high performance replacements of
standard emitters.
.coFeatures
D Extra high radiant power and radiant intensity
UD High reliability
t4D Low forward voltage
D Suitable for high pulse current operation
eD Standard T–1¾ (ø 5 mm) package
eD Angle of half intensity ϕ = ± 17°
D Peak wavelength lp = 940 nm
hD Good spectral matching to Si photodetectors
taSApplications
Infrared remote control units with high power requirements
Free air transmission systems
aInfrared source for optical counters and card readers
IR source for smoke detectors
.DAbsolute Maximum Ratings
wTamb = 25_C
wParameter
Reverse Voltage
wForward Current
Peak Forward Current
omSurge Forward Current
.cPower Dissipation
UJunction Temperature
t4Operating Temperature Range
eStorage Temperature Range
eSoldering Temperature
hThermal Resistance Junction/Ambient
Test Conditions
tp/T = 0.5, tp = 100 m s
tp = 100 m s
xt 5sec, 2 mm from case
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
100
200
1.5
210
100
–55...+100
–55...+100
260
350
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
ataSDocument Number 81012
www.DRev. 1, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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