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TSAL7600 Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer TSAL7600
Beschreibung GaAs/GaAlAs IR Emitting Diode
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logo 




Gesamt 5 Seiten
TSAL7600 Datasheet, Funktion
om TSAL7600Vishay Telefunken
t4U.c ¾GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1 ) Package
eeDescription
hTSAL7600 is a high efficiency infrared emitting diode
taSin GaAlAs on GaAs technology, molded in clear plastic
packages.
aIn comparison with the standard GaAs on GaAs
.Dtechnology these emitters achieve more than 100 %
wradiant power improvement at a similar wavelength.
w The forward voltages at low current and at high pulse
w current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
omFeatures
.cD Extra high radiant power and radiant intensity
D High reliability
UD Low forward voltage
D Suitable for high pulse current operation
t4D Standard T–1¾ (ø 5 mm) package
eD Angle of half intensity ϕ = ± 30°
D Peak wavelength lp = 940 nm
eD Good spectral matching to Si photodetectors
hApplications
SInfrared remote control units with high power requirements
taFree air transmission systems
Infrared source for optical counters and card readers
IR source for smoke detectors
.DaAbsolute Maximum Ratings
Tamb = 25_ C
wParameter
Reverse Voltage
wForward Current
wPeak Forward Current
Test Conditions
tp/T = 0.5, tp = 100 m s
94 8494
Symbol
VR
IF
IFM
Value
5
100
200
Unit
V
mA
mA
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Document Number 81015
Rev. 2, 20-May-99
tp = 100 m s
eet4U.comxt 5sec, 2 mm from case
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
1.5
210
100
–55...+100
–55...+100
260
350
A
mW
°C
°C
°C
°C
K/W
ataShwww.vishay.de FaxBack +1-408-970-5600
www.D 1 (5)





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